18257926. IMAGING ELEMENT AND IMAGING DEVICE simplified abstract (Sony Semiconductor Solutions Corporation)
Contents
IMAGING ELEMENT AND IMAGING DEVICE
Organization Name
Sony Semiconductor Solutions Corporation
Inventor(s)
Tatsuya Okawa of Kanagawa (JP)
Masataka Sugimoto of Kanagawa (JP)
IMAGING ELEMENT AND IMAGING DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18257926 titled 'IMAGING ELEMENT AND IMAGING DEVICE
Simplified Explanation
The patent application describes a method to downsize an imaging element formed by stacking multiple semiconductor substrates. The imaging element includes pixels, a pixel circuit, an isolating section, a buried electrode, and a connecting location.
- Each pixel consists of a photoelectric conversion section on the first semiconductor substrate, a charge holding section, and a charge transfer section.
- The pixel circuit generates an image signal based on charges held on a second semiconductor substrate stacked on the front surface side of the first semiconductor substrate.
- The isolating section is placed at the boundary of the pixels.
- The buried electrode overlaps the isolating section at the boundary of the pixel and is connected to the first semiconductor substrate.
- The connecting location is connected to the buried electrode.
- Potential Applications
- Digital cameras
- Medical imaging devices
- Surveillance cameras
- Problems Solved
- Downsizing imaging elements
- Improving image quality
- Enhancing performance of imaging devices
- Benefits
- Reduced size and weight of imaging elements
- Improved image resolution
- Enhanced functionality of imaging devices
Original Abstract Submitted
To downsize an imaging element formed by stacking a plurality of semiconductor substrates. The imaging element includes pixels, a pixel circuit, an isolating section, a buried electrode, and a connecting location. Each of the pixels includes: a photoelectric conversion section on the first semiconductor substrate; a charge holding section that holds a charge generated by the photoelectric conversion section; and a charge transfer section. The pixel circuit generates an image signal on the basis of charges disposed and held on a second semiconductor substrate stacked on the front surface side of the first semiconductor substrate. The isolating section is disposed at a boundary of the pixels. The buried electrode is disposed at the boundary of the pixel overlapping the isolating section, so as to be connected to the first semiconductor substrate. The connecting location is connected to the buried electrode.