18244546. SEMICONDUCTOR PACKAGE INCLUDING A THREE-DIMENSIONAL STACKED MEMORY MODULE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR PACKAGE INCLUDING A THREE-DIMENSIONAL STACKED MEMORY MODULE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR PACKAGE INCLUDING A THREE-DIMENSIONAL STACKED MEMORY MODULE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR PACKAGE INCLUDING A THREE-DIMENSIONAL STACKED MEMORY MODULE
Organization Name
Inventor(s)
Dong Joo Choi of Suwon-si (KR)
SEMICONDUCTOR PACKAGE INCLUDING A THREE-DIMENSIONAL STACKED MEMORY MODULE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18244546 titled 'SEMICONDUCTOR PACKAGE INCLUDING A THREE-DIMENSIONAL STACKED MEMORY MODULE
Simplified Explanation
The semiconductor package described in the patent application includes a first redistribution layer with a conductive pattern, connection terminals, a stacked memory module, a second redistribution layer with another conductive pattern, bump connections, a semiconductor chip, and a dummy structure.
- The first redistribution layer consists of an insulating layer with a conductive pattern embedded within it.
- Connection terminals are located on one surface of the first redistribution layer for external connections.
- A stacked memory module is placed on the opposite surface of the first redistribution layer.
- The second redistribution layer is positioned on top of the stacked memory module, containing another insulating layer with a conductive pattern.
- Bump connections are present on one surface of the second redistribution layer, in contact with the stacked memory module.
- A semiconductor chip is placed on the other surface of the second redistribution layer.
- A dummy structure is situated between the first and second redistribution layers, spaced apart from the stacked memory module.
Potential Applications
The technology described in this patent application could be applied in the semiconductor industry for advanced packaging solutions, particularly in memory modules and semiconductor chip integration.
Problems Solved
This innovation addresses the challenge of optimizing space and connectivity in semiconductor packages, allowing for efficient stacking of memory modules and semiconductor chips while maintaining proper insulation and connection pathways.
Benefits
The benefits of this technology include improved performance, increased integration capabilities, enhanced space efficiency, and streamlined manufacturing processes in semiconductor packaging.
Potential Commercial Applications
- "Advanced Semiconductor Packaging Solutions for Memory Modules and Chips"
Possible Prior Art
There is no prior art mentioned in this article.
Unanswered Questions
How does this technology compare to existing semiconductor packaging solutions in terms of performance and efficiency?
The article does not provide a direct comparison with existing technologies to evaluate the performance and efficiency of this semiconductor package.
What are the potential challenges or limitations of implementing this technology in mass production?
The article does not address any potential challenges or limitations that may arise when scaling up the production of this semiconductor package.
Original Abstract Submitted
A semiconductor package includes: a first redistribution layer including a first insulating layer and a first conductive pattern disposed in the first insulating layer; a first connection terminal disposed on a first surface of the first redistribution layer; a stacked memory module disposed on second surface of the first redistribution layer; a second redistribution layer disposed on the stacked memory module, and including a second insulating layer and a second conductive pattern disposed in the second insulating layer; a first bump disposed on a first surface of the second redistribution layer, and in contact with the stacked memory module; a first semiconductor chip disposed on second surface of the second redistribution layer; and a dummy structure disposed between the first redistribution layer and the second redistribution layer and spaced apart from the stacked memory module.
