18244462. SEMICONDUCTOR PACKAGE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR PACKAGE
Organization Name
Inventor(s)
GWANGJAE Jeon of Hwaseong-si (KR)
JUNG-HO Park of Cheonan-si (KR)
SEMICONDUCTOR PACKAGE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18244462 titled 'SEMICONDUCTOR PACKAGE
Simplified Explanation
The abstract describes a semiconductor package that includes a redistribution substrate and a semiconductor chip. The redistribution substrate has an under-bump pattern, a lower dielectric layer, and a first redistribution pattern. The under-bump pattern has a wider top surface and a greater thickness compared to the first line part of the first redistribution pattern.
- The semiconductor package includes a redistribution substrate and a semiconductor chip.
- The redistribution substrate has an under-bump pattern, a lower dielectric layer, and a first redistribution pattern.
- The under-bump pattern has a wider top surface and a greater thickness than the first line part of the first redistribution pattern.
Potential applications of this technology:
- Semiconductor packaging industry
- Electronics manufacturing
Problems solved by this technology:
- Provides improved electrical connectivity and signal transmission between the semiconductor chip and the redistribution substrate.
- Helps to reduce signal loss and improve overall performance of the semiconductor package.
Benefits of this technology:
- Enhanced electrical performance and reliability of the semiconductor package.
- Enables higher data transfer rates and improved functionality of electronic devices.
- Can potentially lead to smaller and more compact semiconductor packages.
Original Abstract Submitted
Disclosed is a semiconductor package comprising a redistribution substrate, and a semiconductor chip on a top surface of the redistribution substrate. The redistribution substrate includes an under-bump pattern, a lower dielectric layer that covers a sidewall of the under-bump pattern, and a first redistribution pattern on the lower dielectric layer. The first redistribution pattern includes a first line part. A width at a top surface of the under-bump pattern is greater than a width at a bottom surface of the under-bump pattern. A thickness of the under-bump pattern is greater than a thickness of the first line part.
