18238390. NANOROD LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
NANOROD LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Junhee Choi of Seongnam-si (KR)
Joohun Han of Hwaseong-si (KR)
NANOROD LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18238390 titled 'NANOROD LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The patent application describes a nanorod light-emitting device with specific layers and impurities to enable efficient light emission.
- The device includes a first semiconductor layer doped with a conductive impurity of one type.
- Above the first layer, there is an emission layer.
- A second semiconductor layer is placed above the emission layer and doped with a conductive impurity of the opposite type to the first layer.
- A conductive layer is positioned between the emission layer and either the first semiconductor layer or the second semiconductor layer.
- A current blocking layer surrounds the sidewall of the conductive layer.
Potential applications of this technology:
- Lighting: The nanorod light-emitting device can be used for energy-efficient lighting solutions.
- Displays: The device can be utilized in the development of high-resolution and high-brightness displays.
- Optoelectronics: It can be integrated into various optoelectronic devices such as lasers, sensors, and photovoltaic cells.
Problems solved by this technology:
- Efficient light emission: The specific layer and impurity configuration allows for improved light emission efficiency.
- Current blocking: The current blocking layer prevents unwanted current leakage, enhancing device performance.
Benefits of this technology:
- Energy efficiency: The nanorod light-emitting device offers energy-efficient lighting and optoelectronic solutions.
- High performance: The device provides improved light emission efficiency and current blocking, resulting in enhanced device performance.
- Versatility: It can be applied in various applications, including lighting, displays, and optoelectronics.
Original Abstract Submitted
Provided is a nanorod light-emitting device including a first semiconductor layer doped with a first conductive type impurity, an emission layer disposed above the first semiconductor layer, a second semiconductor layer disposed above the emission layer and doped with a second conductive type impurity that is electrically opposite to the first conductive type impurity, a conductive layer disposed between at least one of a center portion of a lower surface of the emission layer and the first semiconductor layer and a center portion of an upper surface of the emission layer and the second semiconductor layer, and a current blocking layer surrounding a sidewall of the conductive layer.
