18232345. NOVEL IMAGE SENSOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

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NOVEL IMAGE SENSOR DEVICE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Chen-Hsiang Hung of Kaohsiung City (TW)

Chung-Chuan Tseng of Hsinchu City (TW)

Li-Hsin Chu of New Taipei City (TW)

Chia-Ping Lai of Hsinchu City (TW)

NOVEL IMAGE SENSOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18232345 titled 'NOVEL IMAGE SENSOR DEVICE

Simplified Explanation

The semiconductor device described in the patent application consists of a photodiode and at least one transistor with a unique gate feature.

  • The photodiode is formed in a substrate.
  • The transistor's gate feature includes a first portion and a second portion connected to the end of the first portion.
  • The first portion of the gate feature is positioned above and extends along a major surface of the substrate.
  • The second portion of the gate feature extends from the major surface of the substrate into the substrate.
  • The photodiode and the transistor together form a pixel in the semiconductor device.

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      1. Potential Applications
  • Image sensors
  • Optical communication devices
  • Medical imaging equipment
      1. Problems Solved
  • Improved performance and efficiency of semiconductor devices
  • Enhanced pixel functionality in imaging applications
      1. Benefits
  • Higher sensitivity and resolution in imaging
  • Reduced noise and improved signal processing capabilities
  • Increased functionality and versatility in various applications


Original Abstract Submitted

A semiconductor device includes: a photodiode formed in a substrate; and at least one transistor having a gate feature that comprises a first portion and a second portion coupled to an end of the first portion, the first portion disposed above and extending along a major surface of the substrate and the second portion extending from the major surface of the substrate into the substrate, wherein the photodiode and the at least one transistor at least partially form a pixel.

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