18232323. APPARATUS AND METHODS FOR SENSING LONG WAVELENGTH LIGHT simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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APPARATUS AND METHODS FOR SENSING LONG WAVELENGTH LIGHT

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Yun-Wei Cheng of Taipei City (TW)

Chun-Hao Chou of Tainan City (TW)

Kuo-Cheng Lee of Tainan City (TW)

Ying-Hao Chen of Tainan City (TW)

APPARATUS AND METHODS FOR SENSING LONG WAVELENGTH LIGHT - A simplified explanation of the abstract

This abstract first appeared for US patent application 18232323 titled 'APPARATUS AND METHODS FOR SENSING LONG WAVELENGTH LIGHT

Simplified Explanation

The patent application describes apparatus and methods for sensing long wavelength light using a semiconductor device.

  • The semiconductor device includes a carrier, a device layer, a semiconductor layer, and an insulation layer.
  • The semiconductor layer consists of isolation regions and pixel regions.
  • The isolation regions are made of a first semiconductor material.
  • The pixel regions are made of a second semiconductor material that is different from the first semiconductor material.

Potential Applications

  • Long wavelength light sensing in various industries such as telecommunications, medical imaging, and environmental monitoring.
  • Integration into cameras, sensors, and other devices that require detection of long wavelength light.

Problems Solved

  • Enables efficient sensing of long wavelength light by utilizing different semiconductor materials in the pixel regions.
  • Provides isolation regions to prevent interference and improve the accuracy of light sensing.

Benefits

  • Improved sensitivity and accuracy in detecting long wavelength light.
  • Enhanced performance and reliability of devices incorporating this technology.
  • Potential for miniaturization and integration into various applications.


Original Abstract Submitted

Apparatus and methods for sensing long wavelength light are described herein. A semiconductor device includes: a carrier; a device layer on the carrier; a semiconductor layer on the device layer, and an insulation layer on the semiconductor layer. The semiconductor layer includes isolation regions and pixel regions. The isolation regions are or include a first semiconductor material. The pixel regions are or include a second semiconductor material that is different from the first semiconductor material.

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