18227467. SEMICONDUCTOR MANUFACTURING APPARATUS, GAS SUPPLYING METHOD USING THE SAME, AND SEMICONDUCTOR MANUFACTURING METHOD USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

From WikiPatents
Revision as of 04:20, 26 April 2024 by Wikipatents (talk | contribs) (Creating a new page)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)
Jump to navigation Jump to search

SEMICONDUCTOR MANUFACTURING APPARATUS, GAS SUPPLYING METHOD USING THE SAME, AND SEMICONDUCTOR MANUFACTURING METHOD USING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Chan Kyu Lim of Suwon-si (KR)

Yoonbon Koo of Suwon-si (KR)

Hanhim Kang of Suwon-si (KR)

Suji Gim of Suwon-si (KR)

Jongkoo Lim of Suwon-si (KR)

SEMICONDUCTOR MANUFACTURING APPARATUS, GAS SUPPLYING METHOD USING THE SAME, AND SEMICONDUCTOR MANUFACTURING METHOD USING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18227467 titled 'SEMICONDUCTOR MANUFACTURING APPARATUS, GAS SUPPLYING METHOD USING THE SAME, AND SEMICONDUCTOR MANUFACTURING METHOD USING THE SAME

Simplified Explanation

The present disclosure provides methods and apparatuses for supplying a process gas in a semiconductor manufacturing process. In some embodiments, the method includes heating, using one or more heating devices of the semiconductor manufacturing apparatus, a gas tank and a gas line of the semiconductor manufacturing apparatus. The method further includes filling, through the gas line, the gas tank with a reaction gas. The method further includes changing, using the one or more heating devices, a temperature of the reaction gas in the gas tank. The method further includes supplying the reaction gas from the gas tank to a process chamber of the semiconductor manufacturing apparatus. The changing of the temperature of the reaction gas includes decomposing a portion of the reaction gas into one or more materials different from the reaction gas.

  • Heating devices are used to heat a gas tank and gas line in a semiconductor manufacturing apparatus.
  • The method involves filling the gas tank with a reaction gas through the gas line.
  • The temperature of the reaction gas in the gas tank is changed using the heating devices.
  • The reaction gas is supplied from the gas tank to a process chamber of the semiconductor manufacturing apparatus.

Potential Applications

This technology can be applied in semiconductor manufacturing processes, specifically in supplying process gases to process chambers.

Problems Solved

This technology solves the problem of efficiently supplying and controlling the temperature of reaction gases in semiconductor manufacturing processes.

Benefits

The benefits of this technology include improved process control, enhanced efficiency in gas supply, and potentially higher quality semiconductor products.

Potential Commercial Applications

One potential commercial application of this technology is in semiconductor fabrication facilities, where precise control of process gases is crucial for manufacturing high-quality semiconductor devices.

Possible Prior Art

One possible prior art for this technology could be systems or methods used in semiconductor manufacturing processes for supplying and controlling process gases.

Unanswered Questions

How does this technology compare to existing gas supply systems in semiconductor manufacturing processes?

This article does not provide a direct comparison to existing gas supply systems in semiconductor manufacturing processes.

What are the specific materials that can be decomposed from the reaction gas in this process?

The article does not specify the exact materials that can be decomposed from the reaction gas in this process.


Original Abstract Submitted

The present disclosure provides methods and apparatuses for supplying a process gas in a semiconductor manufacturing process. In some embodiments, the method includes heating, using one or more heating devices of the semiconductor manufacturing apparatus, a gas tank and a gas line of the semiconductor manufacturing apparatus. The method further includes filling, through the gas line, the gas tank with a reaction gas. The method further includes changing, using the one or more heating devices, a temperature of the reaction gas in the gas tank. The method further includes supplying the reaction gas from the gas tank to a process chamber of the semiconductor manufacturing apparatus. The changing of the temperature of the reaction gas includes decomposing a portion of the reaction gas into one or more materials different from the reaction gas.