18226694. ANTIFERROELECTRIC CONTAINING DYSPROSIUM AND A MANUFACTURING METHOD THEREOF simplified abstract (Hyundai Motor Company)

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ANTIFERROELECTRIC CONTAINING DYSPROSIUM AND A MANUFACTURING METHOD THEREOF

Organization Name

Hyundai Motor Company

Inventor(s)

Hyung Suk Kim of Gwangmyeong-si (KR)

Hyo Soon Shin of Jinju-si (KR)

Dong Hun Yeo of Seoul (KR)

Jeoung Sik Choi of Changwon-si (KR)

ANTIFERROELECTRIC CONTAINING DYSPROSIUM AND A MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18226694 titled 'ANTIFERROELECTRIC CONTAINING DYSPROSIUM AND A MANUFACTURING METHOD THEREOF

Simplified Explanation

The abstract describes an antiferroelectric with a PbLa([ZrSn]Ti) composition that exhibits high permittivity and breakdown voltage, manufactured through appropriate mixing and dysprosium addition.

  • Antiferroelectric with PbLa([ZrSn]Ti) composition
  • High permittivity and breakdown voltage
  • Manufactured through mixing and dysprosium addition

Potential Applications

The antiferroelectric material could be used in:

  • Capacitors
  • Energy storage devices
  • Sensors

Problems Solved

This technology addresses:

  • Low permittivity in materials
  • Low breakdown voltage in capacitors

Benefits

The benefits of this technology include:

  • Improved performance in energy storage devices
  • Enhanced reliability in sensors

Potential Commercial Applications

This technology could be applied in:

  • Electronics industry
  • Energy storage sector

Possible Prior Art

Prior art may include:

  • Antiferroelectric materials with different compositions
  • Methods for improving permittivity in materials

Unanswered Questions

How does the dysprosium addition affect the properties of the antiferroelectric material?

The specific role of dysprosium in enhancing the properties of the antiferroelectric material is not detailed in the abstract.

Are there any limitations to the manufacturing process of the antiferroelectric material?

The abstract does not mention any potential challenges or limitations in the manufacturing process of the antiferroelectric material.


Original Abstract Submitted

An antiferroelectric and a method for manufacturing an antiferroelectric are disclosed herein. The antiferroelectric may have high permittivity and breakdown voltage by having a PbLa([ZrSn]Ti) composition. The manufacturing of the antiferroelectric may be performed through appropriate mixing and dysprosium addition.