18224802. INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Chulkwon Park of Suwon-si (KR)
Gyunghyun Yoon of Suwon-si (KR)
INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18224802 titled 'INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes an integrated circuit semiconductor device that includes field insulating layers buried in field trenches, active regions defined by the field insulating layers, and active fins protruding from the surfaces of the field insulating layers. The field insulating layers consist of a first subfield insulating layer and a second subfield insulating layer, with the surface of the first subfield insulating layer positioned at a lower level than the surface of the second subfield insulating layer.
- The patent describes an integrated circuit semiconductor device with buried field insulating layers and active fins.
- The field insulating layers are divided into a first and second subfield insulating layer, with the first layer positioned at a lower level than the second layer.
Potential Applications:
- This technology can be used in the manufacturing of integrated circuits for various electronic devices such as smartphones, computers, and IoT devices.
- It can improve the performance and efficiency of integrated circuits by providing better insulation and structural support.
Problems Solved:
- The buried field insulating layers help to isolate and protect the active regions and active fins from interference and leakage.
- The different levels of the subfield insulating layers prevent cross-talk and improve the overall performance of the integrated circuit.
Benefits:
- Enhanced insulation and protection of active regions and active fins.
- Improved performance and efficiency of integrated circuits.
- Reduced cross-talk and interference between different components of the integrated circuit.
Original Abstract Submitted
An Integrated Circuit (IC) semiconductor device includes: field insulating layers buried in field trenches disposed apart from each other inside a substrate; active regions defined by the field insulating layers; and active fins disposed on the active regions and protruding from surfaces of the field insulating layers. The field insulating layers include a first subfield insulating layer and a second subfield insulating layer, and a surface of the first subfield insulating layer is disposed at a level lower than a level of a surface of the second subfield insulating layer.
