18220861. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Jae Joon Song of Suwon-si (KR)
Dong-Sik Park of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18220861 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The semiconductor memory device described in the patent application includes a unique structure with channel trenches, channel structures, wordlines, landing pads, and data storage patterns for efficient data storage and retrieval.
- Peripheral gate structure on a substrate
- Bitlines on the peripheral gate structure extending in a first direction
- Protruding insulating pattern with channel trenches in a second direction intersecting the first direction
- Channel structures on the bitlines in the channel trenches with a metal oxide
- First and second wordlines on the channel structures in the second direction
- Landing pads on the channel structures connected to the channel structures
- Pad separation patterns on the insulating pattern separating the landing pads
- First passage patterns made of an oxide-based insulating material connected to the insulating pattern through pad separation patterns
- Data storage patterns on the landing pads
Potential Applications
This technology can be applied in:
- High-speed data storage devices
- Advanced computing systems
- Memory-intensive applications
Problems Solved
This technology solves issues related to:
- Efficient data storage and retrieval
- Space optimization in memory devices
- Enhanced performance in semiconductor memory systems
Benefits
The benefits of this technology include:
- Improved data access speeds
- Higher storage capacity
- Enhanced overall system performance
Potential Commercial Applications
The potential commercial applications of this technology include:
- Solid-state drives (SSDs)
- Mobile devices
- Cloud computing servers
Possible Prior Art
One possible prior art for this technology could be the use of metal oxide in channel structures for memory devices. This innovation builds upon existing techniques to improve data storage efficiency.
Unanswered Questions
How does this technology compare to traditional memory devices in terms of speed and capacity?
This article does not provide a direct comparison between this technology and traditional memory devices in terms of speed and capacity.
What are the potential cost implications of implementing this technology in mass production?
This article does not address the potential cost implications of implementing this technology in mass production.
Original Abstract Submitted
Disclosed is a semiconductor memory device including a peripheral gate structure on a substrate, bitlines disposed on the peripheral gate structure and extending in a first direction, a protruding insulating pattern including channel trenches, extending in a second direction intersecting the first direction, channel structures disposed on the bitlines in the channel trenches and including a metal oxide, first wordlines disposed on the channel structures and extending in the second direction, second wordlines disposed on the channel structures, extending in the second direction, and spaced apart from the first wordlines in the first direction, landing pads disposed on the channel structures and connected to the channel structures, pad separation patterns disposed on the protruding insulating pattern and separating the landing pads, first passage patterns connected to the protruding insulating pattern through pad separation patterns and formed of an oxide-based insulating material, and data storage patterns disposed on the landing pads.
