View source for 18217730. NON-VOLATILE MEMORY DEVICE AND SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

=NON-VOLATILE MEMORY DEVICE AND SYSTEM INCLUDING THE SAME=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Min Jun Lee of Suwon-si (KR)|Min Jun Lee of Suwon-si (KR)]][[Category:Min Jun Lee of Suwon-si (KR)]]

[[:Category:Jong Ho Woo of Suwon-si (KR)|Jong Ho Woo of Suwon-si (KR)]][[Category:Jong Ho Woo of Suwon-si (KR)]]

[[:Category:Yong Seok Kim of Suwon-si (KR)|Yong Seok Kim of Suwon-si (KR)]][[Category:Yong Seok Kim of Suwon-si (KR)]]

==NON-VOLATILE MEMORY DEVICE AND SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18217730 titled 'NON-VOLATILE MEMORY DEVICE AND SYSTEM INCLUDING THE SAME

==Simplified Explanation==

The abstract describes a non-volatile memory device that includes various layers and components such as a substrate, insulating layer, bit line isolation layer, common source line conductive layer, and a ferroelectric memory cell. The ferroelectric memory cell consists of a ferroelectric layer, channel layer, first conductive filler, and second conductive filler. The first conductive filler is connected to the bit line, while the second conductive filler is connected to the common source line.

* The non-volatile memory device includes a substrate, insulating layer, bit line isolation layer, common source line conductive layer, and a ferroelectric memory cell.
* The ferroelectric memory cell consists of a ferroelectric layer, channel layer, first conductive filler, and second conductive filler.
* The first conductive filler is connected to the bit line, and the second conductive filler is connected to the common source line.

Potential Applications:
* Non-volatile memory devices are widely used in various electronic devices such as computers, smartphones, and IoT devices.
* The use of ferroelectric memory cells in the device can provide high-density storage and low-power consumption, making it suitable for applications where these factors are important.

Problems Solved:
* Non-volatile memory devices are essential for storing data even when power is turned off, but traditional technologies have limitations in terms of density and power consumption.
* The use of ferroelectric memory cells addresses these limitations by providing higher density storage and lower power consumption.

Benefits:
* The non-volatile memory device with ferroelectric memory cells offers higher density storage, allowing for more data to be stored in a smaller space.
* It also provides lower power consumption, resulting in improved energy efficiency and longer battery life for devices.
* The device can be used in various electronic devices, enabling advancements in computing, communication, and IoT technologies.


==Original Abstract Submitted==

A non-volatile memory device includes a substrate; an insulating layer on the substrate; a bit line isolation layer on the insulating layer; a common source line conductive layer on the bit line isolation layer; a ferroelectric memory cell on the bit line isolation layer; a bit line connected to a top of the ferroelectric memory cell; and a common source line connected to the common source line conductive layer and electrically connected to the ferroelectric memory cell, wherein the ferroelectric memory cell includes a ferroelectric layer, a channel layer, a first conductive filler connected to the ferroelectric layer and the channel layer and extending in a vertical direction, and a second conductive filler connected to the ferroelectric layer and the channel layer and extending in the vertical direction, the first conductive filler is connected to the bit line, and the second conductive filler is connected to the common source line.



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