18217087. CHARGE PUMP HAVING SWITCH CIRCUITS FOR BLOCKING LEAKAGE CURRENT DURING SUDDEN POWER-OFF, AND FLASH MEMORY INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 CHARGE PUMP HAVING SWITCH CIRCUITS FOR BLOCKING LEAKAGE CURRENT DURING SUDDEN POWER-OFF, AND FLASH MEMORY INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 CHARGE PUMP HAVING SWITCH CIRCUITS FOR BLOCKING LEAKAGE CURRENT DURING SUDDEN POWER-OFF, AND FLASH MEMORY INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
CHARGE PUMP HAVING SWITCH CIRCUITS FOR BLOCKING LEAKAGE CURRENT DURING SUDDEN POWER-OFF, AND FLASH MEMORY INCLUDING THE SAME
Organization Name
Inventor(s)
TAE-HONG Kwon of Suwon-si (KR)
CHARGE PUMP HAVING SWITCH CIRCUITS FOR BLOCKING LEAKAGE CURRENT DURING SUDDEN POWER-OFF, AND FLASH MEMORY INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18217087 titled 'CHARGE PUMP HAVING SWITCH CIRCUITS FOR BLOCKING LEAKAGE CURRENT DURING SUDDEN POWER-OFF, AND FLASH MEMORY INCLUDING THE SAME
Simplified Explanation
The abstract describes a charge pump for a flash memory, consisting of a first stage pump and a second stage pump connected between different nodes to generate pumping voltages for the memory.
- The first stage pump includes a switch circuit and a pump circuit to provide power supply voltage and pumping voltage in response to signals and clock signals.
- The switch circuit blocks current flow in sudden power-off events to protect the pump node and maintain stability.
Potential Applications
The technology can be applied in flash memory devices, such as solid-state drives, USB drives, and memory cards, to efficiently generate pumping voltages for programming and erasing operations.
Problems Solved
1. Preventing damage to the pump node during sudden power-off events. 2. Ensuring stable power supply and pumping voltages for reliable flash memory operation.
Benefits
1. Improved reliability and longevity of flash memory devices. 2. Enhanced performance during programming and erasing operations. 3. Cost-effective solution for generating pumping voltages.
Potential Commercial Applications
Optimized Charge Pump Technology for Flash Memory Devices
Possible Prior Art
Prior art may include existing charge pump designs for flash memory or similar semiconductor devices that address power supply and voltage generation challenges.
Unanswered Questions
How does this technology compare to traditional charge pump designs in terms of efficiency and reliability?
The article does not provide a direct comparison between this technology and traditional charge pump designs in terms of efficiency and reliability. Further research or testing may be needed to evaluate the performance differences.
What impact could this technology have on the overall cost of flash memory devices?
The article does not discuss the potential cost implications of implementing this technology in flash memory devices. A cost analysis or comparison with existing technologies could provide insights into the economic benefits of this innovation.
Original Abstract Submitted
Disclosed is a charge pump of a flash memory, which includes a first stage pump that is connected between an output terminal and a first pump node, and a second stage pump that is connected between the first pump node and a second pump node. The first stage pump includes a first switch circuit that is connected between a power terminal and the first pump node and provides a power supply voltage to the first pump node in response to a first stage signal, in a normal operation, and a first pump circuit that generates a first pumping voltage by using a voltage of the first pump node in response to a first clock signal and provides the first pumping voltage to the output terminal. The first switch circuit blocks a current flow from the first pump node to the power terminal in a sudden power-off event.
