18216133. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

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SEMICONDUCTOR DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Jeong Yeol Bae of Suwon-si (KR)

Jong Soo Lee of Suwon-si (KR)

Duk Soo Kim of Suwon-si (KR)

Eui Bong Yang of Suwon-si (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18216133 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the patent application includes two Low Noise Amplifiers (LNAs), two receiving circuits, and a radio frequency multiplexer. The first LNA is connected to a first receiving port, while the second LNA is connected to a second receiving port. The first receiving circuit processes the outputs of both LNAs using a transformer, and the second receiving circuit processes the outputs as well. The radio frequency multiplexer controls the connection between the LNAs and the receiving circuits, and includes a variable capacitor connected to the first transformer.

  • The semiconductor device includes two Low Noise Amplifiers (LNAs) connected to different receiving ports.
  • The receiving circuits process the outputs of the LNAs using transformers.
  • The radio frequency multiplexer controls the connection between the LNAs and the receiving circuits.
  • A variable capacitor is included in the first receiving circuit.
      1. Potential Applications

- This technology can be used in wireless communication systems to improve signal reception and processing. - It can be applied in radar systems to enhance sensitivity and accuracy.

      1. Problems Solved

- Provides improved signal processing capabilities in semiconductor devices. - Enables better control and management of signal connections in radio frequency systems.

      1. Benefits

- Enhanced signal reception and processing. - Improved overall performance of wireless communication and radar systems.


Original Abstract Submitted

A semiconductor device includes a first Low Noise Amplifier (LNA), a second LNA, first and second receiving circuits, an a radio frequency multiplexer. The first LNA is connected to a first receiving port, and the second LNA is connected to a second receiving port different from the first receiving port. The first receiving circuit includes a first transformer and processes one or more outputs of the first and second LNAs. The second receiving circuit processes one or more of the outputs of the first and second LNAs. The radio frequency multiplexer controls connection between the first and second LNAs and the first and second receiving circuits. The first receiving circuit includes a first variable capacitor having a first end connected to an output of the radio frequency multiplexer and a second end connected to the first transformer.