18215454. SUBSTRATE PROCESSING APPARATUS AND EXHAUST METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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SUBSTRATE PROCESSING APPARATUS AND EXHAUST METHOD THEREOF

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Jungkuk Lee of Suwon-si (KR)

Kitaek Song of Suwon-si (KR)

Jongkuk Won of Suwon-si (KR)

Sangmi Yoon of Suwon-si (KR)

Junhyun Lee of Suwon-si (KR)

SUBSTRATE PROCESSING APPARATUS AND EXHAUST METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18215454 titled 'SUBSTRATE PROCESSING APPARATUS AND EXHAUST METHOD THEREOF

Simplified Explanation

The abstract describes a method for exhaust control in a substrate processing apparatus. The method involves measuring the flow rate of process gases in a mixed gas supplied to a process chamber. Based on this flow rate, the lower explosion limit of the mixed gas and the volume percentage of a combustible process gas are determined. The supply flow rate of a dilution gas is then determined based on the volume percentage and the lower explosion limit. Finally, the dilution gas is supplied to the mixed gas in the process chamber at the determined flow rate.

  • The method measures the flow rate of process gases in a mixed gas supplied to a process chamber.
  • Based on the flow rate, the lower explosion limit of the mixed gas and the volume percentage of a combustible process gas are determined.
  • The supply flow rate of a dilution gas is determined based on the volume percentage and the lower explosion limit.
  • The dilution gas is supplied to the mixed gas in the process chamber at the determined flow rate.

Potential applications of this technology:

  • Semiconductor manufacturing: This method can be used in substrate processing apparatuses used in the manufacturing of semiconductors.
  • Chemical processing: The method can be applied in various chemical processing industries where precise control of process gases is required.

Problems solved by this technology:

  • Safety concerns: By determining the lower explosion limit and adjusting the supply flow rate of dilution gas, the risk of explosions in the process chamber can be minimized.
  • Process optimization: The method allows for precise control of process gases, ensuring optimal conditions for substrate processing.

Benefits of this technology:

  • Enhanced safety: By controlling the flow rate of dilution gas, the risk of explosions can be significantly reduced, ensuring a safer working environment.
  • Improved process control: The method enables precise control of process gases, leading to improved process efficiency and product quality.


Original Abstract Submitted

An exhaust method of a substrate processing apparatus, includes: measuring a first flow rate for each of process gases included in a mixed gas supplied to a process chamber; determining, based on the first flow rate, a lower explosion limit of the mixed gas and a first volume percentage of a combustible process gas among the process gases; determining a supply flow rate of a first dilution gas based on the first volume percentage and the lower explosion limit; and supplying, at the determined supply flow rate of the first dilution gas, the first dilution gas to the mixed gas in the process chamber.