18213732. MEMORY DEVICE WITH STATUS FEEDBACK FOR ERROR CORRECTION simplified abstract (MICRON TECHNOLOGY, INC.)

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MEMORY DEVICE WITH STATUS FEEDBACK FOR ERROR CORRECTION

Organization Name

MICRON TECHNOLOGY, INC.

Inventor(s)

Scott E. Schaefer of Boise ID (US)

Aaron P. Boehm of Boise ID (US)

MEMORY DEVICE WITH STATUS FEEDBACK FOR ERROR CORRECTION - A simplified explanation of the abstract

This abstract first appeared for US patent application 18213732 titled 'MEMORY DEVICE WITH STATUS FEEDBACK FOR ERROR CORRECTION

Simplified Explanation

The patent application describes a memory device that incorporates status feedback for error correction. Here are the key points:

  • The memory device performs error correction on data read from its memory array during a read operation.
  • The error correction operation generates second data and an indicator of the error state corresponding to the second data.
  • The indicator can represent multiple possible states of error or indicate a corrected error or no detectable error.
  • The memory device outputs the first or second data and the indicator of the error state simultaneously during a burst interval.
  • The data is output on a first channel, while the indicator of the error state is output on a second channel.

Potential applications of this technology:

  • Memory devices in various electronic devices such as computers, smartphones, and tablets.
  • Data storage systems that require reliable and accurate data retrieval.
  • Communication systems where error correction is crucial for maintaining data integrity.

Problems solved by this technology:

  • Efficient error correction during read operations, ensuring accurate data retrieval.
  • Simultaneous output of data and error state indicator reduces latency and improves overall system performance.
  • The indicator provides valuable information about the error state, allowing for appropriate actions to be taken.

Benefits of this technology:

  • Improved reliability and accuracy of data retrieval from memory devices.
  • Reduced latency and improved system performance due to simultaneous data and error state output.
  • Enhanced error detection and correction capabilities, leading to more robust data storage and communication systems.


Original Abstract Submitted

Methods, systems, and devices for a memory device with status feedback for error correction are described. For example, during a read operation, a memory device may perform an error correction operation on first data read from a memory array of the memory device. The error correction operation may generate second data and an indicator of a state of error corresponding to the second data. In one example, the indicator may indicate one of multiple possible states of error. In another example, the indicator may indicate a corrected error or no detectable error. The memory device may output the first or second data and the indicator of the state of error during a same burst interval. The memory device may output the data on a first channel and the indicator of the state of error on a second channel.

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