18212817. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Sug Hyun Sung of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18212817 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a substrate with first and second regions, active patterns, gate structures, source/drain patterns, and sheet patterns. The second active pattern has a height identical to the first active pattern but with a different number of sheet patterns. The second gate structure has a wider gate electrode than the first gate structure.
- The semiconductor device has a unique design with different numbers of sheet patterns in the first and second active patterns.
- The second gate structure features a wider gate electrode compared to the first gate structure, potentially improving performance.
Potential Applications
This semiconductor device could be used in various electronic devices such as smartphones, tablets, and computers.
Problems Solved
This technology may help improve the efficiency and performance of semiconductor devices by optimizing the design of active patterns and gate structures.
Benefits
The benefits of this technology include potentially enhanced device performance, increased efficiency, and improved overall functionality.
Potential Commercial Applications
The optimized design of this semiconductor device could be attractive to manufacturers of electronic devices looking to improve the performance of their products.
Possible Prior Art
There may be prior art related to semiconductor devices with different active pattern designs, but further research is needed to identify specific examples.
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor devices to assess performance and efficiency differences.
What are the potential challenges in implementing this technology on a large scale for commercial production?
The article does not address the potential challenges that may arise when scaling up production of this semiconductor device for commercial purposes.
Original Abstract Submitted
A semiconductor device includes a substrate including first and second regions; a first active pattern including a first lower pattern and first sheet patterns; a second active pattern including a second lower pattern, a height of the second lower pattern being identical to a height of the first lower pattern, and second sheet patterns; a first gate structure including a first gate insulating film and a first gate electrode; a second gate structure including a second gate insulating film, and a second gate electrode, a width of the second gate electrode being greater than a width of the first gate electrode; a first source/drain pattern on the first lower pattern and connected to the first sheet patterns; and a second source/drain pattern on the second lower pattern and connected to the second sheet patterns, wherein a number of first sheet patterns is smaller than a number of second sheet patterns.
