View source for 18212559. METAL-SEMICONDUCTOR HYBRID STRUCTURES, SYNTHESES THEREOF, AND USES THEREOF simplified abstract (HONDA MOTOR CO., LTD.)

=METAL-SEMICONDUCTOR HYBRID STRUCTURES, SYNTHESES THEREOF, AND USES THEREOF=


==Organization Name==

[[:Category:HONDA MOTOR CO., LTD.|HONDA MOTOR CO., LTD.]]


[[Category:HONDA MOTOR CO., LTD.]]

==Inventor(s)==

[[:Category:Shutang Chen of Livermore CA (US)|Shutang Chen of Livermore CA (US)]][[Category:Shutang Chen of Livermore CA (US)]]

[[:Category:Gugang Chen of Palo Alto CA (US)|Gugang Chen of Palo Alto CA (US)]][[Category:Gugang Chen of Palo Alto CA (US)]]

==METAL-SEMICONDUCTOR HYBRID STRUCTURES, SYNTHESES THEREOF, AND USES THEREOF - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18212559 titled 'METAL-SEMICONDUCTOR HYBRID STRUCTURES, SYNTHESES THEREOF, AND USES THEREOF

==Simplified Explanation==

The present disclosure relates to semiconductor nanoparticles, metal-semiconductor hybrid structures, processes for producing semiconductor nanoparticles, processes for producing metal-semiconductor hybrid structures, and processes for producing conversion products.

* Process for producing a metal-semiconductor hybrid structure:
  - Introduce a first precursor containing a metal from Group 11-Group 14 to an amine and an anion precursor to form a semiconductor nanoparticle.
  - Introduce a second precursor containing a metal from Group 7-Group 11 to the semiconductor nanoparticle to form a metal-semiconductor mixture.
  - Introduce the metal-semiconductor mixture to separation conditions to produce the metal-semiconductor hybrid structure.

* Metal-semiconductor hybrid structure:
  - Includes a first component with a metal from Group 11-Group 14 and an element from Group 15-Group 16.
  - Includes a second component with a metal from Group 7-Group 11.

== Potential Applications ==
The technology can be applied in the fields of electronics, optoelectronics, and catalysis due to the unique properties of the metal-semiconductor hybrid structures.

== Problems Solved ==
This technology addresses the need for efficient and controlled synthesis of metal-semiconductor hybrid structures for various applications in different industries.

== Benefits ==
The benefits of this technology include enhanced performance, improved efficiency, and increased versatility in the design of advanced materials for specific applications.

== Potential Commercial Applications ==
The technology can be commercialized in sectors such as semiconductor manufacturing, renewable energy, and sensor development, offering innovative solutions for next-generation devices.

== Possible Prior Art ==
One possible prior art could be the use of traditional methods for producing semiconductor nanoparticles and metal-semiconductor structures, which may lack the precision and control achieved by the processes described in this disclosure.

=== Unanswered Questions ===

=== How does this technology compare to existing methods for producing metal-semiconductor hybrid structures? ===
The article does not provide a direct comparison with existing methods, making it unclear how this technology stands out in terms of efficiency, cost-effectiveness, and scalability.

=== What are the specific applications in the electronics industry for these metal-semiconductor hybrid structures? ===
The article mentions potential applications in electronics but does not delve into specific use cases or advantages in this particular industry, leaving room for further exploration of the technology's relevance in electronics applications.


==Original Abstract Submitted==

Aspects of the present disclosure generally relate to semiconductor nanoparticles, metal-semiconductor hybrid structures, processes for producing semiconductor nanoparticles, processes for producing metal-semiconductor hybrid structures, and processes for producing conversion products. In an aspect is provided a process for producing a metal-semiconductor hybrid structure that includes introducing a first precursor comprising a metal from Group 11-Group 14 to an amine and an anion precursor to form a semiconductor nanoparticle comprising the Group 11-Group 14 metal; introducing a second precursor comprising a metal from Group 7-Group 11 to the semiconductor nanoparticle to form a metal-semiconductor mixture; and introducing the metal-semiconductor mixture to separation conditions to produce the metal-semiconductor hybrid structure. In another aspect is provided a metal-semiconductor hybrid structure that includes a first component comprising a metal from Group 11-Group 14 and an element from Group 15-Group 16; and a second component comprising a metal from Group 7-Group 11.



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