18208459. SEMICONDUCTOR DEVICE, ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

SEMICONDUCTOR DEVICE, ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Yejin Park of Suwon-si (KR)

Seung Yoon Kim of Suwon-si (KR)

Heesuk Kim of Suwon-si (KR)

Hyeongjin Kim of Suwon-si (KR)

Sehee Jang of Suwon-si (KR)

Minsoo Shin of Suwon-si (KR)

Seungjun Shin of Suwon-si (KR)

Sanghun Chun of Suwon-si (KR)

Jeehoon Han of Suwon-si (KR)

Jae-Hwang Sim of Suwon-si (KR)

Jongseon Ahn of Suwon-si (KR)

SEMICONDUCTOR DEVICE, ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18208459 titled 'SEMICONDUCTOR DEVICE, ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME

Simplified Explanation

The semiconductor device described in the patent application includes a unique structure with a first gate stack, memory channel structure, through contact, and connection contact. The first memory portion is narrower than the first through portion and the first connection portion.

• First gate stack structure with alternating dielectric and conductive patterns
• Memory channel structure with a memory portion penetrating the gate stack
• Through contact with a through portion at the same level as the memory portion
• Connection contact with a connection portion at the same level as the memory and through portions

Potential Applications

This technology could be applied in the development of advanced semiconductor devices for various electronic systems, such as memory storage devices, processors, and communication devices.

Problems Solved

This innovation addresses the challenge of optimizing the layout and design of semiconductor devices to improve performance and efficiency while maintaining compactness and reliability.

Benefits

The benefits of this technology include enhanced memory functionality, improved connectivity, and increased integration density, leading to higher performance and energy efficiency in electronic systems.

Potential Commercial Applications

The potential commercial applications of this technology could be in the semiconductor industry for the production of next-generation memory chips, processors, and other advanced electronic components.

Possible Prior Art

One possible prior art could be the use of through contacts and connection contacts in semiconductor devices, but the specific configuration and layout described in this patent application appear to be novel and inventive.

How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?

The article does not provide a direct comparison with existing semiconductor device structures to evaluate the performance and efficiency improvements offered by this innovation.

What are the potential challenges in implementing this technology on a large scale for commercial production?

The article does not address the potential challenges that may arise in scaling up the fabrication process and integrating this technology into mass production of semiconductor devices.

Original Abstract Submitted

Disclosed are semiconductor devices, electronic systems including the same, and methods of fabricating the same. The semiconductor device comprises a first gate stack structure including a first dielectric pattern and a first conductive pattern that are alternately stacked with each other, a memory channel structure including a first memory portion that penetrates the first gate stack structure, a through contact including a first through portion at a level the same as a level of the first memory portion, and a connection contact including a first connection portion at a level the same as the level of the first memory portion and the level of the first through portion. A minimum width of the first memory portion is less than a minimum width of the first through portion and a minimum width of the first connection portion.