18204033. DEFECT DETECTING DEVICE AND METHOD simplified abstract (Samsung Electronics Co., Ltd.)

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DEFECT DETECTING DEVICE AND METHOD

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Sungwook Hwang of Suwon-si (KR)

Tae Soo Shin of Suwon-si (KR)

Seulgi Ok of Suwon-si (KR)

Kibum Lee of Suwon-si (KR)

DEFECT DETECTING DEVICE AND METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 18204033 titled 'DEFECT DETECTING DEVICE AND METHOD

Simplified Explanation

The patent application describes a test device that uses reference data to measure the height of patterns on semiconductor samples based on shadow length measurements.

  • The memory of the device stores reference data, including a reference image of a pattern on a semiconductor sample, the height of the pattern, the shadow length of the pattern, and a reference value representing the correlation between height and shadow length.
  • The controller of the device receives an image of a pattern on a different semiconductor sample, measures the shadow length of the pattern from the image, and calculates the height of the pattern based on the reference data.

Potential Applications

This technology could be applied in semiconductor manufacturing processes to accurately measure the height of patterns on samples, ensuring quality control and consistency in production.

Problems Solved

This technology solves the problem of accurately measuring the height of patterns on semiconductor samples, which is crucial for ensuring the functionality and performance of semiconductor devices.

Benefits

The benefits of this technology include improved quality control in semiconductor manufacturing, increased accuracy in height measurements, and enhanced efficiency in production processes.

Potential Commercial Applications

A potential commercial application of this technology could be in the semiconductor industry for quality control and process optimization in manufacturing.

Possible Prior Art

One possible prior art for this technology could be existing systems or methods used in semiconductor manufacturing for measuring pattern heights on samples.

Unanswered Questions

How does this technology compare to existing methods for measuring pattern heights on semiconductor samples?

This article does not provide a direct comparison between this technology and existing methods for measuring pattern heights on semiconductor samples.

What are the limitations of this technology in terms of measuring pattern heights on semiconductor samples?

This article does not address the potential limitations of this technology in accurately measuring pattern heights on semiconductor samples.


Original Abstract Submitted

A test device includes a memory and a controller. The memory stores reference data including a reference image obtained by photographing a reference pattern on a first semiconductor sample, a first height of the reference pattern, a first shadow length of the reference pattern, and a reference value that represents a correlation between the first height and the first shadow length. The controller receives an image obtained by photographing a pattern on a second semiconductor sample, measures a second shadow length of the pattern from the image, and calculates a second height of the pattern from the second shadow length based on the reference data.