18201878. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Wook Hyun Kwon of Suwon-si (KR)
Kyu Bong Choi of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18201878 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes two active patterns with different heights and widths, gate structures, and source/drain patterns connected to sheet patterns.
- The device has a first active pattern with a first lower pattern and first sheet patterns, and a second active pattern with a second lower pattern and second sheet patterns.
- The height of the second lower pattern is smaller than the height of the first lower pattern.
- There are first and second gate structures on the respective lower patterns.
- A first source/drain pattern is on the first lower pattern and connected to the first sheet patterns, while a second source/drain pattern is on the second lower pattern and connected to the second sheet patterns.
- The width of the upper surface of the first lower pattern differs from the width of the upper surface of the second lower pattern.
- The number of first sheet patterns is different from the number of second sheet patterns.
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices for various electronic applications.
Problems Solved
This innovation addresses the need for more efficient and compact semiconductor devices with improved performance.
Benefits
The semiconductor device offers enhanced functionality, increased performance, and potentially reduced power consumption.
Potential Commercial Applications
- "Advanced Semiconductor Device Technology for Enhanced Performance and Efficiency"
Possible Prior Art
There may be prior art related to semiconductor device structures with multiple active patterns and gate structures, but specific examples are not provided in this abstract.
Unanswered Questions
How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?
The abstract does not provide a direct comparison with existing technologies, so it is unclear how this innovation stands out in the market.
What specific electronic applications could benefit the most from this semiconductor device technology?
The abstract does not mention any specific electronic applications that could benefit from this technology, leaving room for further exploration into potential use cases.
Original Abstract Submitted
A semiconductor device includes a first active pattern including a first lower pattern and first sheet patterns; a second active pattern including a second lower pattern and second sheet patterns, a height of the second lower pattern being smaller than a height of the first lower pattern; a first gate structure on the first lower pattern; a second gate structure on the second lower pattern; a first source/drain pattern on the first lower pattern and connected to the first sheet patterns; and a second source/drain pattern on the second lower pattern and connected to the second sheet patterns, wherein a width of an upper surface of the first lower pattern is different from a width of an upper surface of the second lower pattern, and wherein a number of first sheet patterns is different from a number of second sheet patterns.
