18199982. PLASMA CONTROL APPARATUS AND METHOD USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 PLASMA CONTROL APPARATUS AND METHOD USING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 PLASMA CONTROL APPARATUS AND METHOD USING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
PLASMA CONTROL APPARATUS AND METHOD USING THE SAME
Organization Name
Inventor(s)
PLASMA CONTROL APPARATUS AND METHOD USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18199982 titled 'PLASMA CONTROL APPARATUS AND METHOD USING THE SAME
Simplified Explanation
The patent application describes a plasma control apparatus that includes a first transmission line and a second transmission line transferring radio frequency (RF) power to a plasma chamber, a matcher, a first plasma control circuit, a sensor, and an auxiliary RF power source. The apparatus is designed to selectively control harmonics of the RF power in the plasma chamber.
- The first transmission line transfers RF power adjacent to the center of the plasma chamber.
- The second transmission line transfers RF power and auxiliary RF power adjacent to an edge of the plasma chamber to cancel out the harmonics sensed by the sensor.
Potential Applications
This technology could be applied in plasma processing systems, semiconductor manufacturing, and other industries requiring precise control of plasma characteristics.
Problems Solved
1. Control of harmonics in a plasma chamber. 2. Precise tuning of RF power distribution in the plasma chamber.
Benefits
1. Improved plasma control and efficiency. 2. Enhanced process repeatability and reliability. 3. Reduction of unwanted harmonics in the plasma chamber.
Potential Commercial Applications
Optimizing plasma etching processes in semiconductor manufacturing. Enhancing surface treatment techniques in materials processing industries.
Possible Prior Art
Prior art may include patents related to plasma control systems, RF power distribution in plasma chambers, and harmonic cancellation techniques in plasma processing.
Unanswered Questions
How does this technology compare to existing plasma control systems on the market?
This article does not provide a direct comparison with existing plasma control systems, making it difficult to assess the competitive advantages of this technology.
What are the specific technical specifications and performance metrics of this plasma control apparatus?
The article does not delve into the detailed technical specifications or performance metrics of the plasma control apparatus, leaving potential users with limited information on its capabilities and limitations.
Original Abstract Submitted
A plasma control apparatus includes a first transmission line and a second transmission line transferring radio frequency (RF) power to a plasma chamber, a matcher disposed on the first transmission line a first plasma control circuit disposed on the first transmission line and configured to selectively and independently control harmonics of one or more of the at least two frequencies, a sensor configured to sense the harmonics of the plasma chamber, and an auxiliary RF power source disposed on the second transmission line and configured to generate auxiliary RF power to cancel out the harmonics sensed by the sensor, wherein, in a plan view, the first transmission line transfers the RF power adjacent to the center of the plasma chamber, and the second transmission line transfers the RF power and the auxiliary RF power and the auxiliary RF power adjacent to an edge of the plasma chamber.
