18197428. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18197428 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The semiconductor memory device described in the patent application includes a substrate with active patterns, channel patterns, source/drain patterns, gate electrodes, shared contacts, and a backside metal layer.
- The device has a substrate with active patterns on one surface, connected to channel patterns and source/drain patterns.
- Gate electrodes are provided on the channel patterns and adjacent to the source/drain patterns, with a shared contact connecting them.
- A backside metal layer is present on the opposite surface of the substrate.
Potential Applications
The technology described in this patent application could be applied in:
- Memory devices
- Integrated circuits
- Semiconductor manufacturing
Problems Solved
This technology helps in:
- Improving memory device performance
- Enhancing semiconductor device reliability
- Increasing data storage capacity
Benefits
The benefits of this technology include:
- Higher efficiency in data storage
- Improved functionality of semiconductor devices
- Enhanced overall performance of integrated circuits
Potential Commercial Applications
The potential commercial applications of this technology could be seen in:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art for this technology could be the use of shared contacts in semiconductor devices to improve electrical connections and device performance.
Unanswered Questions
How does this technology compare to existing memory devices in terms of speed and efficiency?
This technology offers improved performance and efficiency compared to existing memory devices due to its unique design and shared contact feature.
What are the potential challenges in implementing this technology on a large scale for commercial production?
Some potential challenges in implementing this technology on a large scale could include manufacturing complexity, cost considerations, and ensuring compatibility with existing production processes.
Original Abstract Submitted
A semiconductor memory device includes a substrate including first and second surfaces opposite to each other, a first active pattern on the first surface, a first channel pattern on the first active pattern and a first source/drain pattern connected to the first channel pattern, a gate electrode provided on the first channel pattern and extending in a first direction, the gate electrode adjacent to the first source/drain pattern in a second direction intersecting the first direction, a shared contact provided under the first source/drain pattern and the gate electrode and electrically connecting the first source/drain pattern and the gate electrode to each other, and a backside metal layer on the second surface.
