18193859. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18193859 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes a barrier layer, a gate electrode, a gate semiconductor layer, and a source and drain on a channel layer. The barrier layer has a greater energy band gap than the channel layer, and the gate semiconductor layer has different surfaces with varying slopes.
- The barrier layer has a greater energy band gap than the channel layer.
- The gate semiconductor layer has different surfaces with varying slopes.
Potential Applications
This technology could be applied in:
- High-performance electronic devices
- Power electronics
- Integrated circuits
Problems Solved
This technology helps in:
- Enhancing device performance
- Improving energy efficiency
- Reducing leakage current
Benefits
The benefits of this technology include:
- Higher efficiency
- Improved device reliability
- Enhanced overall performance
Potential Commercial Applications
This technology could be used in:
- Semiconductor manufacturing industry
- Electronics industry
- Research and development sector
Possible Prior Art
One possible prior art for this technology could be:
- Previous patents related to semiconductor device structures with barrier layers and gate semiconductor layers.
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of energy efficiency?
This technology offers improved energy efficiency compared to existing semiconductor devices due to the barrier layer with a greater energy band gap.
What impact does the gate semiconductor layer with different surfaces have on device performance?
The gate semiconductor layer with different surfaces could potentially enhance device performance by optimizing charge transport and control within the device.
Original Abstract Submitted
A semiconductor device may include a barrier layer on a channel layer, a gate electrode on the barrier layer, a gate semiconductor layer between the barrier layer and the gate electrode, and a source and a drain spaced apart from each other on the channel layer. The barrier layer may have a greater energy band gap than the channel layer. The gate semiconductor layer may include a first surface contacting the barrier layer and a second surface contacting the gate electrode, and a sidewall connecting the first surface with the second surface. An area of the second surface of the gate semiconductor layer may be narrower than an area of the first surface. The sidewall of the gate semiconductor layer may include a plurality of surfaces having different slopes.
