18186754. PROTECTION LAYER FOR SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
PROTECTION LAYER FOR SEMICONDUCTOR DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
I-Han Huang of New Taipei City (TW)
Fu-Cheng Chang of Hsinchu City (TW)
Wen-Ting Lan of Hsinchu City (TW)
Shi Ning Ju of Hsinchu City (TW)
Kuo-Cheng Chiang of Zhubei City (TW)
PROTECTION LAYER FOR SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18186754 titled 'PROTECTION LAYER FOR SEMICONDUCTOR DEVICE
Simplified Explanation
The present disclosure describes a method for forming a semiconductor structure with an oxide structure on a wafer edge. This method involves several steps, including:
- Forming a device layer on a first substrate
- Forming an interconnect layer on the device layer
- Forming an oxide structure on the top surface and sidewall surface of the interconnect layer
- Forming a bonding layer on the oxide structure and interconnect layer
- Bonding the device layer to a second substrate using the bonding layer
Potential applications of this technology include:
- Semiconductor manufacturing
- Integrated circuit fabrication
- Wafer bonding processes
The problems solved by this technology include:
- Ensuring a strong and reliable bond between the device layer and the second substrate
- Providing protection to the interconnect layer and preventing damage during the bonding process
- Facilitating the integration of different semiconductor structures
The benefits of this technology include:
- Improved structural integrity and reliability of the semiconductor structure
- Enhanced protection for the interconnect layer
- Increased flexibility in semiconductor manufacturing processes
Original Abstract Submitted
The present disclosure describes a method to form a semiconductor structure having an oxide structure on a wafer edge. The method includes forming a device layer on a first substrate, forming an interconnect layer on the device layer, forming an oxide structure on a top surface and along a sidewall surface of the interconnect layer, forming a bonding layer on the oxide structure and the interconnect layer, and bonding the device layer to a second substrate with the bonding layer.
