18182583. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Kioxia Corporation)

From WikiPatents
Jump to navigation Jump to search

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Organization Name

Kioxia Corporation

Inventor(s)

Shoichi Kabuyanagi of Yokkaichi Mie (JP)

Tsuyoshi Sugisaki of Yokkaichi Mie (JP)

Shosuke Fujii of Kuwana Mie (JP)

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18182583 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Simplified Explanation

The abstract describes a semiconductor device that includes various conductors and insulators. Here is a simplified explanation of the abstract:

  • The device consists of a first conductor, a first oxide semiconductor, a first insulator, a second conductor, a third conductor, and a fourth conductor.
  • The first oxide semiconductor is in contact with one end of the first conductor and extends in a direction perpendicular to the surface of the first conductor.
  • The first insulator surrounds the side surface of the first oxide semiconductor.
  • The second conductor and the first oxide semiconductor are separated by the first insulator.
  • The third conductor is in contact with the other end of the first oxide semiconductor.
  • The fourth conductor extends in a direction perpendicular to the first direction and is in contact with the second conductor on the side opposite to the first insulator.
  • The second conductor has a higher work function than the fourth conductor.

Potential applications of this technology:

  • Integrated circuits
  • Transistors
  • Memory devices
  • Sensors
  • Solar cells

Problems solved by this technology:

  • Improved performance and efficiency of semiconductor devices
  • Enhanced conductivity and functionality
  • Reduction of power consumption
  • Increased reliability and stability

Benefits of this technology:

  • Higher performance and efficiency
  • Improved conductivity and functionality
  • Lower power consumption
  • Enhanced reliability and stability


Original Abstract Submitted

A semiconductor device according to an embodiment includes a first conductor, a first oxide semiconductor, a first insulator, a second conductor, a third conductor, and a fourth conductor. The first oxide semiconductor contacts, at one end, the first conductor, and extends in a first direction intersecting a surface of the first conductor. The first insulator surrounds a side surface of the first oxide semiconductor. The second conductor and the first oxide semiconductor interpose the first insulator therebetween. The third conductor contacts another end of the first oxide semiconductor. The fourth conductor extends in a second direction intersecting the first direction, and contacts a second conductor on a side opposite to the first insulator. The second conductor is of a material with a higher work function than a material of the fourth conductor.

Retrieved from "http://wikipatents.org/index.php?title=18182583._SEMICONDUCTOR_DEVICE_AND_METHOD_OF_MANUFACTURING_THE_SAME_simplified_abstract_(Kioxia_Corporation)&oldid=18836"