18182507. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Young-Lim Park of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18182507 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The disclosed semiconductor device consists of several layers including a lower electrode, interfacial films, a dielectric film, and an upper electrode.
- The lower electrode is placed on a substrate.
- A first lower interfacial film is positioned on the lower electrode.
- A dielectric film is placed on top of the first lower interfacial film.
- A first upper interfacial film is positioned on the dielectric film.
- An upper electrode is placed on the first upper interfacial film.
The key feature of this device is that both the first lower interfacial film and the first upper interfacial film are conductive single films made of the same metal element. Additionally, the metal element in these films has a higher electronegativity compared to the metal element in the dielectric film.
Potential applications of this technology:
- Semiconductor devices such as transistors, capacitors, and memory cells.
- Integrated circuits and microchips used in electronic devices.
Problems solved by this technology:
- Enhances the performance and efficiency of semiconductor devices.
- Improves the stability and reliability of the device by using conductive films with higher electronegativity.
Benefits of this technology:
- Increased conductivity and improved electrical properties.
- Better control of charge storage and flow within the device.
- Enhanced device performance and reliability.
Original Abstract Submitted
Disclosed is a semiconductor device. The semiconductor device includes a lower electrode disposed on a substrate; a first lower interfacial film disposed on the lower electrode; a dielectric film disposed on the first lower interfacial film; a first upper interfacial film disposed on the dielectric film; and an upper electrode disposed on the first upper interfacial film, wherein each of the first lower interfacial film and the first upper interfacial film is a conductive single film, and the first lower interfacial film and the first upper interfacial film include the same metal element, wherein electronegativity of the metal element included in each of the first lower interfacial film and the first upper interfacial film is greater than electronegativity of a metal element included in the dielectric film.
