View source for 18180439. HIGH FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)

=HIGH FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:KABUSHIKI KAISHA TOSHIBA|KABUSHIKI KAISHA TOSHIBA]]


[[Category:KABUSHIKI KAISHA TOSHIBA]]

==Inventor(s)==

[[:Category:Takayuki Teraguchi of Kawasaki Kanagawa (JP)|Takayuki Teraguchi of Kawasaki Kanagawa (JP)]][[Category:Takayuki Teraguchi of Kawasaki Kanagawa (JP)]]

==HIGH FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18180439 titled 'HIGH FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE

==Simplified Explanation==

The SPnT-type high frequency switch described in the abstract consists of a series of first MOS transistors, second MOS transistors, and a capacitor. The first MOS transistors are connected in series between RF terminals and an RF common terminal. The second MOS transistors are connected to adjacent first MOS transistors, and a capacitor is connected between ground and one end of a second MOS transistor.

* The switch includes a series of first MOS transistors connected between RF terminals and an RF common terminal.
* Second MOS transistors are connected to adjacent first MOS transistors.
* A capacitor is connected between ground and one end of a second MOS transistor.

== Potential Applications ==
The technology could be applied in:
* Wireless communication systems
* Radar systems
* Satellite communication systems

== Problems Solved ==
This technology helps in:
* Improving signal processing efficiency
* Enhancing signal transmission quality

== Benefits ==
The benefits of this technology include:
* Higher frequency switching capabilities
* Improved overall system performance

== Potential Commercial Applications ==
Potential commercial applications of this technology could be in:
* Telecommunications industry
* Aerospace industry

== Possible Prior Art ==
There may be prior art related to:
* High frequency switches in RF systems
* MOS transistor configurations in signal processing

== Unanswered Questions ==

=== How does this technology compare to existing high frequency switches in terms of efficiency and performance? ===
The efficiency and performance of this technology compared to existing high frequency switches are not explicitly discussed in the abstract. Further research or testing may be needed to determine this.

=== Are there any limitations or drawbacks to implementing this technology in practical applications? ===
The abstract does not mention any limitations or drawbacks of implementing this technology. Additional information or real-world testing may be necessary to identify any potential challenges.


==Original Abstract Submitted==

According to an embodiment, an SPnT-type high frequency switch includes a plurality of first MOS transistors, second MOS transistors, and a capacitor. The plurality of first MOS transistors are connected in series between one of a plurality of RF terminals and an RF common terminal. The second MOS transistors have ends each connected to adjacent first MOS transistors among the first MOS transistors. The capacitor is connected between ground and another end of a second MOS transistor having one end connected to another end of a first MOS transistor having one end connected to the one of the RF terminals among the first and second MOS transistors.



[[Category:H03K17/687]]