18178371. SEMICONDUCTOR DEVICE WITH STACKED MEMORY PERIPHERY AND ARRAY AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

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SEMICONDUCTOR DEVICE WITH STACKED MEMORY PERIPHERY AND ARRAY AND METHOD FOR FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Han-Jong Chia of Hsinchu City (TW)

SEMICONDUCTOR DEVICE WITH STACKED MEMORY PERIPHERY AND ARRAY AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18178371 titled 'SEMICONDUCTOR DEVICE WITH STACKED MEMORY PERIPHERY AND ARRAY AND METHOD FOR FORMING THE SAME

Simplified Explanation

The abstract describes a patent application for semiconductor devices that involve vertically stacked dies with memory cells and connection features.

  • Memory cells arranged in rows and columns of a memory array
  • First connection features connected to word lines of the memory array
  • Second connection features connected to bit lines of the memory array
  • Third connection features of the second die connected to respective first connection features
  • Word line drivers of the second die connected to respective third connection features
  • Fourth connection features of the second die connected to respective second connection features of the first die
  • Sense amplifiers of the second die connected to respective fourth connection features

Potential Applications

This technology could be applied in:

  • High-density memory modules
  • Advanced computing systems
  • Data storage devices

Problems Solved

This technology helps in:

  • Increasing memory capacity
  • Enhancing data processing speed
  • Improving overall system performance

Benefits

The benefits of this technology include:

  • Improved memory access times
  • Enhanced data transfer rates
  • Reduced power consumption

Potential Commercial Applications

This technology could be commercially used in:

  • Servers and data centers
  • Mobile devices
  • Automotive electronics

Possible Prior Art

One possible prior art for this technology could be:

  • Stacked memory devices with similar connection features

What is the manufacturing process for these vertically stacked dies?

The manufacturing process for vertically stacked dies involves:

  • Fabricating each die separately
  • Aligning the dies accurately for stacking
  • Bonding the dies together using advanced techniques

How does this technology compare to traditional memory modules?

This technology offers:

  • Higher memory density
  • Faster data access speeds
  • Improved overall system performance


Original Abstract Submitted

Semiconductor devices are provided. First and second dies are vertically stacked. The first die includes a plurality of memory cells and a plurality of first and second connection features. The memory cells are arranged in rows and columns of a memory array. The first connection features are electrically connected to a plurality of word lines of the memory array. The second connection features are electrically connected to a plurality of bit lines of the memory array. Each third connection feature of the second die is electrically connected to a respective first connection feature. Each word line driver of the second die is electrically connected to a respective third connection feature. Each fourth connection feature of the second die is electrically connected to a respective second connection feature of the first die. Each sense amplifier of the second die is electrically connected to a respective fourth connection feature.