18171754. INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD EFFECT TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD EFFECT TRANSISTORS AND METHODS OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD EFFECT TRANSISTORS AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD EFFECT TRANSISTORS AND METHODS OF FORMING THE SAME
Organization Name
Inventor(s)
KEUMSEOK Park of Slingerlands NY (US)
SOOYOUNG Park of Halfmoon NY (US)
JAEJIK Baek of Watervliet NY (US)
KANG-ILL Seo of Springfield VA (US)
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD EFFECT TRANSISTORS AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18171754 titled 'INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD EFFECT TRANSISTORS AND METHODS OF FORMING THE SAME
Simplified Explanation
The abstract describes an integrated circuit device with a transistor stack including a first transistor and a second transistor on the first transistor. The first transistor has source/drain regions, a channel region, and a gate structure.
- The integrated circuit device includes a substrate and a transistor stack.
- The transistor stack consists of a first transistor and a second transistor on top of the first transistor.
- The first transistor is positioned between the substrate and the second transistor.
- The first transistor comprises first and second source/drain regions, a channel region, and a gate structure on the channel region.
- The lower surface of the first source/drain region is higher than the lower surface of the first gate structure relative to the substrate.
Potential Applications
This technology could be applied in:
- Semiconductor manufacturing
- Electronics industry
- Integrated circuit design
Problems Solved
This innovation addresses:
- Improving transistor performance
- Enhancing integrated circuit efficiency
Benefits
The benefits of this technology include:
- Higher transistor density
- Increased circuit speed
- Improved overall performance
Potential Commercial Applications
Potential commercial applications of this technology could be in:
- Mobile devices
- Computer hardware
- Automotive electronics
Possible Prior Art
One possible prior art for this technology could be:
- Previous methods of transistor stacking in integrated circuits
Unanswered Questions
How does this technology impact power consumption in integrated circuits?
This article does not delve into the specific effects of this technology on power consumption in integrated circuits.
What are the potential challenges in scaling this technology for mass production?
The article does not address the potential obstacles that may arise when scaling this technology for large-scale manufacturing.
Original Abstract Submitted
Integrated circuit devices and methods of forming the same are provided. An integrated circuit device may include a substrate and a transistor stack on the substrate, the transistor stack including a first transistor and a second transistor on the first transistor. The first transistor may be between the substrate and the second transistor and the first transistor may include first and second source/drain regions, a first channel region between the first and second source/drain regions, and a first gate structure on the first channel region. A lower surface of the first source/drain region may be higher than a lower surface of the first gate structure relative to the substrate.
