18170109. MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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MEMORY DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Jhon-Jhy Liaw of Zhudong Township (TW)

MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18170109 titled 'MEMORY DEVICE

Simplified Explanation

The memory device described in the abstract includes two SRAM cells and a first metal layer. The first SRAM cell consists of write-port PU transistors and read-port PD and PG transistors arranged in the Y-direction, while the second SRAM cell has similar components. The first metal layer covers both SRAM cells and includes a read bit-line conductor shared by both cells.

  • The memory device includes two SRAM cells with specific transistor arrangements in the Y-direction.
  • The first metal layer covers both SRAM cells and includes a shared read bit-line conductor.

Potential Applications

This technology could be applied in:

  • High-speed memory devices
  • Embedded systems
  • Cache memory in processors

Problems Solved

This technology helps address:

  • Improving memory access speed
  • Enhancing memory density
  • Reducing power consumption in memory devices

Benefits

The benefits of this technology include:

  • Faster data retrieval
  • Increased memory capacity
  • Lower power consumption

Potential Commercial Applications

This technology could be commercially applied in:

  • Consumer electronics
  • Automotive systems
  • Telecommunications equipment

Possible Prior Art

One possible prior art for this technology could be:

  • Previous SRAM memory cell designs with different transistor arrangements.

Unanswered Questions

How does this technology compare to traditional SRAM cell designs?

This article does not provide a direct comparison between this technology and traditional SRAM cell designs. It would be beneficial to understand the specific advantages and disadvantages of this new design in comparison to existing ones.

What impact could this technology have on overall system performance?

The article does not delve into the potential impact of this technology on overall system performance. It would be interesting to explore how the implementation of this memory device could affect the performance of systems utilizing it.


Original Abstract Submitted

A memory device includes a first static random access memory (SRAM) cell, a second SRAM cell, and a first metal layer. The first SRAM cell includes a first write-port pull-up (PU) transistor and a second write-port PU transistor arranged in a Y-direction, and a first read-port PD transistor and a first read-port PG transistor. The second SRAM cell includes a third write-port PU transistor and a fourth write-port PU transistor arranged in the Y-direction, and a second read-port PD transistor and a second read-port PG transistor. The first and second read-port PD transistors and the first and second read-port PG transistors are arranged in the Y-direction. The first metal layer is over the first SRAM cell and the second SRAM cell. The first metal layer includes a read bit-line conductor extending in the Y-direction and shared by the first SRAM cell and the second SRAM cell.

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