18168038. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Ju-il Choi of Seongnam-si (KR)
Kwangjin Moon of Hwaseong-si (KR)
Sujeong Park of Hwaseong-si (KR)
Dong-chan Lim of Hwaseong-si (KR)
Atsushi Fujisaki of Seongnam-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18168038 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device that includes a conductive pattern on a substrate, a passivation layer with an opening exposing the conductive pattern, and a pad structure connected to the conductive pattern. The pad structure consists of a first metal layer that fills the opening and a second metal layer on top of the first metal layer. The first metal layer has different thicknesses at different locations.
- The semiconductor device includes a conductive pattern on a substrate.
- A passivation layer is applied on the substrate, with an opening that partially exposes the conductive pattern.
- A pad structure is formed in the opening of the passivation layer and connected to the conductive pattern.
- The pad structure consists of a first metal layer and a second metal layer.
- The first metal layer fills the opening and has a width greater than the opening.
- The first metal layer has different thicknesses at different locations: thicker on the top surface of the conductive pattern, thinner on the top surface of the passivation layer, and even thinner at the outer wall of the first metal layer.
- The second metal layer is on top of the first metal layer.
Potential applications of this technology:
- Semiconductor manufacturing industry
- Integrated circuit fabrication
- Electronics manufacturing
Problems solved by this technology:
- Provides a reliable and efficient connection between the conductive pattern and the pad structure.
- Protects the conductive pattern and the passivation layer from damage or contamination.
Benefits of this technology:
- Improved electrical conductivity and reliability of the semiconductor device.
- Enhanced protection of the conductive pattern and passivation layer.
- Enables more efficient and cost-effective manufacturing processes.
Original Abstract Submitted
Disclosed is a semiconductor device including a conductive pattern on a substrate, a passivation layer on the substrate and including an opening that partially exposes the conductive pattern, and a pad structure in the opening of the passivation layer and connected to the conductive pattern. The pad structure includes a first metal layer that fills the opening of the passivation layer and has a width greater than that of the opening, and a second metal layer on the first metal layer. The first metal layer has a first thickness at an outer wall of the first metal layer, a second thickness on a top surface of the passivation layer, and a third thickness on a top surface of the conductive pattern. The second thickness is greater than the first thickness, and the third thickness is greater than the second thickness.
