18164926. MEMORY DEVICE AND MEMORY APPARATUS COMPRISING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
MEMORY DEVICE AND MEMORY APPARATUS COMPRISING THE SAME
Organization Name
Inventor(s)
Changseung Lee of Suwon-si (KR)
MEMORY DEVICE AND MEMORY APPARATUS COMPRISING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18164926 titled 'MEMORY DEVICE AND MEMORY APPARATUS COMPRISING THE SAME
Simplified Explanation
The memory device described in the patent application includes a first electrode, a second electrode, an intermediate layer, and an interface layer with ovonic threshold switching characteristics.
- The memory device has a first electrode and a second electrode that are spaced apart.
- An intermediate layer is situated between the first and second electrodes.
- An interface layer is in contact with the intermediate layer.
- Both the intermediate layer and the interface layer exhibit ovonic threshold switching (OTS) characteristics.
- The material of the interface layer has a threshold voltage shift greater than the threshold voltage shift of the intermediate layer.
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- Potential Applications of this Technology
- Non-volatile memory devices
- High-speed memory storage
- Low-power consumption memory solutions
- Problems Solved by this Technology
- Improving memory device performance
- Enhancing data storage efficiency
- Reducing power consumption in memory devices
- Benefits of this Technology
- Faster data access speeds
- Increased memory storage capacity
- Lower energy consumption in memory devices
Original Abstract Submitted
Disclosed are a memory device and a memory apparatus including the memory device. The memory device may include a first electrode, a second electrode spaced apart from the first electrode, an intermediate layer between the first electrode and the second electrode, and an interface layer in contact with the intermediate layer. The intermediate layer and the interface layer each may have ovonic threshold switching (OTS) characteristics. A material of the interface layer may have a threshold voltage shift greater than a threshold voltage shift (A Vth) of the intermediate layer.
