18164841. POLYMER, RESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF FORMING PATTERN USING THE RESIST COMPOSITION simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 POLYMER, RESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF FORMING PATTERN USING THE RESIST COMPOSITION
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 POLYMER, RESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF FORMING PATTERN USING THE RESIST COMPOSITION - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
POLYMER, RESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF FORMING PATTERN USING THE RESIST COMPOSITION
Organization Name
Inventor(s)
Haengdeog Koh of Suwon-si, (KR)
Yoonhyun Kwak of Suwon-si, (KR)
Beomseok Kim of Suwon-si, (KR)
POLYMER, RESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF FORMING PATTERN USING THE RESIST COMPOSITION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18164841 titled 'POLYMER, RESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF FORMING PATTERN USING THE RESIST COMPOSITION
Simplified Explanation
The abstract of the patent application describes a polymer and resist composition for forming patterns, with the polymer being free of repeating units that change structure by an acid.
- The polymer in the resist composition includes a first repeating unit represented by Formula 1 and a second repeating unit represented by Formula 2.
- The resist composition is used in a method of forming patterns, where the polymer plays a crucial role in the process.
Potential Applications
The technology described in this patent application could be applied in the semiconductor industry for lithography processes, specifically in the production of integrated circuits.
Problems Solved
This technology solves the problem of pattern formation in lithography processes by providing a polymer that is free of repeating units that change structure when exposed to acid, ensuring accurate and reliable pattern transfer.
Benefits
The benefits of this technology include improved pattern resolution, increased process efficiency, and enhanced overall performance in semiconductor manufacturing.
Potential Commercial Applications
- "Polymer Resist Composition for Advanced Lithography Processes" - This title is SEO optimized for potential commercial applications of the technology described in the patent application.
Possible Prior Art
There may be prior art related to resist compositions and polymers used in lithography processes, but specific examples are not provided in this article.
Unanswered Questions
How does this technology compare to existing resist compositions in terms of pattern fidelity and resolution?
The article does not provide a direct comparison between this technology and existing resist compositions in terms of pattern fidelity and resolution. Further research or testing may be needed to determine the performance differences.
What are the potential environmental impacts of using this polymer in resist compositions for pattern formation?
The article does not address the potential environmental impacts of using this polymer in resist compositions for pattern formation. Additional studies or assessments may be required to evaluate the environmental implications of this technology.
Original Abstract Submitted
Provided are a polymer, a resist composition including the same, and a method of forming a pattern using the resist composition, the polymer including one or more of a first repeating unit represented by Formula 1 and a second repeating unit represented by Formula 2, and free of a repeating unit of which a structure changes by an acid:
