18164600. SEMICONDUCTOR DEVICE AND MEHTOD OF FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE AND MEHTOD OF FABRICATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND MEHTOD OF FABRICATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND MEHTOD OF FABRICATING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Cheng-Yi Wu of Taichung City (TW)
SEMICONDUCTOR DEVICE AND MEHTOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18164600 titled 'SEMICONDUCTOR DEVICE AND MEHTOD OF FABRICATING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes a substrate with a first transistor that has a specific crystal orientation for the channel layer, a magnesium oxide layer below the channel layer, a gate electrode over the channel layer, a gate dielectric between the channel layer and the gate electrode, and source/drain electrodes on the channel layer.
- The first transistor in the semiconductor device has a crystal orientation of <100> or <110> for the channel layer.
- The magnesium oxide layer is located below the channel layer and in contact with it.
- The gate electrode is positioned over the channel layer.
- The gate dielectric is situated between the channel layer and the gate electrode.
- The source/drain electrodes are placed on the channel layer.
Potential Applications
The technology described in this patent application could be applied in:
- Semiconductor manufacturing
- Electronics industry
- Integrated circuits
Problems Solved
This technology helps in:
- Improving transistor performance
- Enhancing device reliability
- Reducing power consumption
Benefits
The benefits of this technology include:
- Increased efficiency
- Enhanced device stability
- Lower energy consumption
Potential Commercial Applications
The potential commercial applications of this technology could be seen in:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art for this technology could be:
- Previous semiconductor devices with similar structures and components
What is the manufacturing process for this semiconductor device?
The manufacturing process for this semiconductor device involves: - Fabricating the substrate - Depositing the magnesium oxide layer - Creating the channel layer with the specific crystal orientation - Forming the gate electrode and gate dielectric - Depositing the source/drain electrodes
How does the crystal orientation of the channel layer impact the performance of the transistor?
The crystal orientation of the channel layer affects the electrical properties of the transistor, such as carrier mobility and threshold voltage. A specific crystal orientation can enhance the overall performance of the transistor by improving its conductivity and efficiency.
Original Abstract Submitted
A semiconductor device includes a substrate, and a first transistor disposed on the substrate. The first transistor includes a first channel layer, a magnesium oxide layer, a first gate electrode, a first gate dielectric and first source/drain electrodes. A crystal orientation of the first channel layer is <100> or <110>. The magnesium oxide layer is located below the first channel layer and in contact with the first channel layer. The first gate electrode is located over the first channel layer. The first gate dielectric is located in between the first channel layer and the first gate electrode. The first source/drain electrodes are disposed on the first channel layer.
