18164053. TARGET PROCESSING DEVICE AND TARGET PROCESSING METHOD simplified abstract (Kioxia Corporation)

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TARGET PROCESSING DEVICE AND TARGET PROCESSING METHOD

Organization Name

Kioxia Corporation

Inventor(s)

Takeharu Motokawa of Zushi Kanagawa (JP)

Noriko Sakurai of Yokohama Kanagawa (JP)

Hideaki Sakurai of Kawasaki Kanagawa (JP)

TARGET PROCESSING DEVICE AND TARGET PROCESSING METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 18164053 titled 'TARGET PROCESSING DEVICE AND TARGET PROCESSING METHOD

Simplified Explanation

The target processing method described in the abstract involves importing a target into a processing chamber, forming a film containing carbon on the target using ion and plasma processes, and then removing the film through a reaction with a second plasma. This process is repeated multiple times without removing the target from the chamber.

  • Import target into processing chamber
  • Form film with carbon using ion and plasma processes
  • Remove film with second plasma reaction
  • Repeat process multiple times without removing target

Potential Applications

The technology described in this patent application could be applied in the following areas:

  • Semiconductor manufacturing
  • Thin film deposition processes
  • Surface modification of materials

Problems Solved

This technology addresses the following issues:

  • Efficient film formation and removal processes
  • Enhanced control over film thickness and composition
  • Reduced downtime due to continuous processing without target removal

Benefits

The benefits of this technology include:

  • Improved film quality and uniformity
  • Increased productivity and throughput
  • Cost-effective processing method

Potential Commercial Applications

The potential commercial applications of this technology could include:

  • Solar cell production
  • Display panel manufacturing
  • Coating and surface treatment industries

Possible Prior Art

One possible prior art for this technology could be the use of similar ion and plasma processes in thin film deposition and etching techniques.

Unanswered Questions

How does this technology compare to traditional film deposition methods?

This article does not provide a direct comparison between this technology and traditional film deposition methods. Further research or experimentation may be needed to determine the advantages and limitations of this approach.

What are the scalability considerations for implementing this technology in industrial settings?

The scalability of this technology for large-scale industrial applications is not discussed in this article. Understanding the challenges and requirements for scaling up this process could be crucial for its practical implementation.


Original Abstract Submitted

A target processing method includes: importing a target into a processing chamber; forming a film including carbon on the target using at least one of first ion including carbon and a first plasma including carbon; and removing the film by a reaction between a second plasma and the film, wherein the forming of the film and the removing of the film are alternately performed a number of times in the processing chamber without removing the target from the processing chamber.