18158192. Method of Implanting Dopants into a Group III-Nitride Structure and Device Formed simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Method of Implanting Dopants into a Group III-Nitride Structure and Device Formed
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Han-Chin Chiu of Kaohsiung City (TW)
Chi-Ming Chen of Zhubei City (TW)
Chen-Hao Chiang of Jhongli City (TW)
Method of Implanting Dopants into a Group III-Nitride Structure and Device Formed - A simplified explanation of the abstract
This abstract first appeared for US patent application 18158192 titled 'Method of Implanting Dopants into a Group III-Nitride Structure and Device Formed
Simplified Explanation
The abstract describes a method for forming a III-V compound layer on a substrate and implanting dopants to create source and drain regions in a semiconductor device. The method also involves implanting a group V material into the source and drain regions.
- The method involves forming a III-V compound layer on a substrate.
- Main dopants are implanted into the III-V compound layer to create source and drain regions.
- A group V material is implanted into the source and drain regions.
- The semiconductor device includes a substrate and a III-V compound layer.
- The source and drain regions in the III-V layer consist of a first dopant and a second dopant, where the second dopant is a group V material.
Potential applications of this technology:
- This method can be used in the fabrication of high-performance semiconductor devices.
- It can be applied in the manufacturing of advanced transistors and integrated circuits.
- The technology may find use in the development of more efficient and faster electronic devices.
Problems solved by this technology:
- The method provides a way to create source and drain regions in a III-V compound layer, which is essential for the operation of semiconductor devices.
- By implanting a group V material, the method allows for precise control of the dopant concentration in the source and drain regions, improving device performance.
Benefits of this technology:
- The method enables the formation of source and drain regions with improved dopant concentration control.
- It offers a simplified process for creating III-V compound layers and implanting dopants.
- The technology can lead to the development of more advanced and efficient semiconductor devices.
Original Abstract Submitted
A method including forming a III-V compound layer on a substrate and implanting a main dopant in the III-V compound layer to form source and drain regions. The method further includes implanting a group V species into the source and drain regions. A semiconductor device including a substrate and a III-V compound layer over the substrate. The semiconductor device further includes source and drain regions in the III-V layer, wherein the source and drain regions comprises a first dopants and a second dopant, and the second dopant comprises a group V material.
