18156543. VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRING simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRING
Organization Name
Inventor(s)
Soichiro Mizusaki of Suwon-si (KR)
VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRING - A simplified explanation of the abstract
This abstract first appeared for US patent application 18156543 titled 'VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRING
Simplified Explanation
The abstract describes a vertical nonvolatile memory device that uses a resistance change material. The device includes a memory cell string with multiple components such as semiconductor layers, gates, insulators, gate insulating layers, and a dielectric film with movable oxygen vacancies.
- The memory cell string of the nonvolatile memory device is made up of various components arranged in a specific manner.
- The device utilizes a resistance change material to store and retrieve data.
- The semiconductor layer extends in one direction and has a first and second surface.
- Gates and insulators are alternately arranged in a direction perpendicular to the semiconductor layer.
- A gate insulating layer is present between the gates and insulators and the semiconductor layer.
- A dielectric film is located on the surface of the semiconductor layer and contains movable oxygen vacancies.
Potential Applications
- This technology can be used in various electronic devices that require nonvolatile memory, such as smartphones, tablets, and computers.
- It can also be applied in data storage systems, including solid-state drives (SSDs) and memory cards.
Problems Solved
- The vertical nonvolatile memory device provides a more compact and efficient solution for data storage compared to traditional memory devices.
- The use of a resistance change material allows for faster read and write speeds, improving overall performance.
- The arrangement of the components in the memory cell string enhances the reliability and durability of the device.
Benefits
- The vertical nonvolatile memory device offers higher storage density, allowing for more data to be stored in a smaller space.
- It provides faster data access and transfer speeds, improving the overall performance of electronic devices.
- The device is more reliable and durable, ensuring data integrity and longevity.
Original Abstract Submitted
A vertical nonvolatile memory device including a memory cell string using a resistance change material is disclosed. Each memory cell string of the nonvolatile memory device includes a semiconductor layer extending in a first direction and having a first surface opposite a second surface, a plurality of gates and a plurality of insulators alternately arranged in the first direction and extending in a second direction perpendicular to the first direction, a gate insulating layer extending in the first direction between the plurality of gates and the semiconductor layer and between the plurality of insulators and the semiconductor layer, and a dielectric film extending in the first direction on the surface of the semiconductor layer and having a plurality of movable oxygen vacancies distributed therein.
