18155828. Displays With Silicon and Semiconducting Oxide Thin-Film Transistors simplified abstract (Apple Inc.)
Contents
Displays With Silicon and Semiconducting Oxide Thin-Film Transistors
Organization Name
Inventor(s)
Hiroshi Osawa of Sunnyvale CA (US)
Kyung-Wook Kim of Saratoga CA (US)
Ming-Chin Hung of San Jose CA (US)
Shih Chang Chang of Cupertino CA (US)
Yu-Cheng Chen of San Jose CA (US)
Displays With Silicon and Semiconducting Oxide Thin-Film Transistors - A simplified explanation of the abstract
This abstract first appeared for US patent application 18155828 titled 'Displays With Silicon and Semiconducting Oxide Thin-Film Transistors
Simplified Explanation
The patent application describes an electronic device with a display that can be either an organic light-emitting diode (OLED) display or a liquid crystal display (LCD).
- OLED displays use hybrid thin-film transistor structures that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures.
- The capacitor structures overlap the semiconducting oxide thin-film transistors.
- OLED display pixels can have combinations of oxide and silicon transistors.
- LCD displays use silicon thin-film transistor circuitry for the display driver circuitry.
- The display pixels in LCDs are based on oxide thin-film transistors.
- The gates of silicon transistors and oxide transistors can be formed using a single layer or two different layers of gate metal.
- A silicon transistor can have a gate that overlaps a floating gate structure.
Potential applications of this technology:
- Consumer electronics such as smartphones, tablets, and televisions could benefit from improved display technology.
- Medical devices that require high-quality displays, such as imaging equipment or wearable health monitors, could be enhanced by this technology.
- Automotive displays, including infotainment systems and instrument clusters, could be improved with the use of OLED or LCD displays.
Problems solved by this technology:
- The hybrid thin-film transistor structures in OLED displays allow for improved performance and efficiency.
- The use of oxide thin-film transistors in LCD displays can provide better image quality and response times.
- The overlapping gate structures in both OLED and LCD displays help optimize the use of space on the display substrate.
Benefits of this technology:
- Enhanced display performance, including improved color accuracy, contrast, and brightness.
- Increased energy efficiency, leading to longer battery life in portable devices.
- More compact and thinner display designs, allowing for sleeker and lighter electronic devices.
Original Abstract Submitted
An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.
