18155054. SCHOTTKY DIODE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)

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SCHOTTKY DIODE AND METHOD FOR FORMING THE SAME

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor(s)

GUAN-YI Li of NEW TAIPEI CITY (TW)

CHIA-CHENG Ho of HSINCHU CITY (TW)

CHAN-YU Hung of TAINAN CITY (TW)

FEI-YUN Chen of HSINCHU (TW)

SCHOTTKY DIODE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18155054 titled 'SCHOTTKY DIODE AND METHOD FOR FORMING THE SAME

Simplified Explanation

The abstract describes a Schottky diode with specific features such as drift regions, doped regions, dielectric layers, and a field plate. Here is a simplified explanation of the patent application:

  • The Schottky diode consists of a substrate with two drift regions and doped regions of different conductivity types.
  • A dielectric layer is placed over the substrate, covering parts of the drift regions.
  • A metal field plate is positioned on top of the dielectric layer.
  • The doped regions are separated from each other within the drift regions.
      1. Potential Applications

The technology described in this patent application could be used in high-frequency rectifiers, power supplies, and RF switches.

      1. Problems Solved

This technology solves issues related to power efficiency, signal rectification, and switching speed in electronic devices.

      1. Benefits

The benefits of this technology include improved performance, higher efficiency, and better control over power flow in electronic circuits.

      1. Potential Commercial Applications

The potential commercial applications of this technology could be in the telecommunications industry, power electronics sector, and semiconductor manufacturing.

      1. Possible Prior Art

One possible prior art for this technology could be the development of Schottky diodes with similar features in the field of semiconductor devices.

        1. Unanswered Questions
        1. How does this technology compare to traditional Schottky diodes in terms of performance and efficiency?

This article does not provide a direct comparison between this innovative Schottky diode and traditional ones. Further research or testing may be needed to determine the specific advantages of this new design.

        1. Are there any limitations or drawbacks to implementing this technology in practical electronic devices?

The article does not mention any potential limitations or drawbacks of using this technology in real-world applications. Additional studies or experiments may be necessary to identify any challenges that could arise during implementation.


Original Abstract Submitted

A Schottky diode includes a substrate, a first drift region in the substrate, a second drift region in the substrate, a first dielectric layer disposed over the substrate, a first doped region in the first drift region, a second doped region in the second drift region, a third doped region in the first drift region, and a metal field plate disposed over the first dielectric layer. The first drift region and the first doped region include a first conductivity type. The second drift region, the second doped region and third doped region include a second conductivity type complementary to the first conductivity type. The first dielectric layer overlaps a portion of the first drift region and a portion of the second drift region. The second doped region is separated from the first doped region.

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