18154614. SEMICONDUCTOR STRUCTURE WITH NITRIDED INNER SPACERS AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

SEMICONDUCTOR STRUCTURE WITH NITRIDED INNER SPACERS AND METHOD FOR MANUFACTURING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Man-Nung Su of Hsinchu (TW)

I-Hsuan Lo of Hsinchu (TW)

SEMICONDUCTOR STRUCTURE WITH NITRIDED INNER SPACERS AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18154614 titled 'SEMICONDUCTOR STRUCTURE WITH NITRIDED INNER SPACERS AND METHOD FOR MANUFACTURING THE SAME

Simplified Explanation

The semiconductor structure described in the abstract includes a channel structure with multiple channel features, a gate structure surrounding the channel features, source/drain features on opposite sides of the channel structure, and inner spacers separating the gate structure from the source/drain features.

• The channel structure consists of multiple channel features that are spaced apart from each other.
• The gate structure surrounds the channel features to control the flow of current.
• The source/drain features are located on opposite sides of the channel structure and are interconnected by the channel features.
• The inner spacers separate the gate structure from the source/drain features and contain a lateral nitrided portion with a higher nitrogen content than the inner spacer body.

Potential Applications

This technology could be applied in the development of advanced semiconductor devices for various electronic applications, such as high-performance computing, telecommunications, and consumer electronics.

Problems Solved

This technology helps improve the performance and efficiency of semiconductor devices by enhancing the control of current flow and reducing leakage currents, ultimately leading to better overall device performance.

Benefits

The use of inner spacers with a lateral nitrided portion helps to improve the reliability and stability of semiconductor devices, leading to enhanced device performance and longevity.

Potential Commercial Applications

The technology described in the patent application could have commercial applications in the semiconductor industry for the production of advanced integrated circuits and electronic devices.

Possible Prior Art

One possible prior art in this field could be the use of similar spacer structures in semiconductor devices to improve device performance and reliability.

How does this technology compare to existing semiconductor structures in terms of performance and efficiency?

This article does not provide a direct comparison with existing semiconductor structures to evaluate the performance and efficiency improvements offered by the described technology.

What are the specific electronic applications that could benefit the most from this technology?

The article does not specify the particular electronic applications that could benefit the most from the technology described, leaving room for further exploration and analysis in this area.

Original Abstract Submitted

A semiconductor structure includes a channel structure, a gate structure, two source/drain features, and a plurality of inner spacers. The channel structure includes a plurality of channel features which are spaced apart from each other. The gate structure is disposed to surround the channel features. The source/drain features are disposed at two opposite sides of the channel structure such that each of the channel features interconnects the source/drain features. Each of the inner spacers is disposed to separate the gate structure from a corresponding one of the source/drain features. Each of the inner spacers includes an inner spacer body and a lateral nitrided portion. The lateral nitrided portion is in direct contact with the corresponding one of the source/drain features and has a nitrogen content greater than that of the inner spacer body.