18152770. MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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MEMORY DEVICE AND METHOD OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Cheng-Hsien Wu of Hsinchu City (TW)

Chen-Feng Hsu of Hsinchu (TW)

Chien-Min Lee of Hsinchu County (TW)

Tung-Ying Lee of Hsinchu City (TW)

Xinyu Bao of Fremont CA (US)

Elia Ambrosi of Hsinchu City (TW)

Hengyuan Lee of Hsinchu County (TW)

MEMORY DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18152770 titled 'MEMORY DEVICE AND METHOD OF FORMING THE SAME

Simplified Explanation

The abstract of the patent application describes a memory device that consists of several layers, including a substrate, a bottom electrode, a memory layer, a selector layer, and a top electrode. The selector layer is made of an oxygen-doped chalcogenide based film, with an oxygen content of 10% or less.

  • The memory device consists of multiple layers, including a substrate, electrodes, and memory and selector layers.
  • The selector layer is made of an oxygen-doped chalcogenide based film.
  • The oxygen content in the selector layer is limited to 10% or less.

Potential Applications:

  • Memory devices using this technology could be used in various electronic devices, such as computers, smartphones, and tablets.
  • This technology could be applied in data storage systems, allowing for higher capacity and faster access.

Problems Solved:

  • The memory device addresses the need for efficient and reliable data storage solutions.
  • The oxygen-doped chalcogenide based film in the selector layer helps improve the performance and stability of the memory device.

Benefits:

  • The memory device offers improved data storage capacity and access speed.
  • The oxygen-doped chalcogenide based film enhances the reliability and efficiency of the memory device.
  • This technology enables the development of smaller and more compact memory devices.


Original Abstract Submitted

A memory device includes a substrate, a bottom electrode disposed over the substrate, a memory layer disposed over the bottom electrode, a selector layer disposed over the memory layer, and a top electrode disposed over the selector layer. The selector layer is an oxygen-doped chalcogenide based film, and an oxygen content of the selector layer is about 10 at % or less.

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