18152171. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Han-Jong Chia of Hsinchu City (TW)
Shih-Peng Tai of Hsinchu County (TW)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18152171 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes a magnetic tunnel junction (MTJ) structure with a specific layer configuration, a transistor, interconnection structure, bonding pads, conductive lines, and substrates. Here are the key points of the innovation:
- The device includes a transistor and interconnection structure on the first substrate.
- A magnetic tunnel junction (MTJ) structure is formed on a bonding pad on the interconnection structure.
- The MTJ structure consists of a free layer, tunnel barrier layer, and synthetic antiferromagnet layer.
- A conductive line is placed on the MTJ structure.
- A second substrate is placed on the conductive line.
Potential Applications
The technology described in this patent application could be applied in:
- Magnetic memory devices
- Spintronics applications
- Magnetic sensors
Problems Solved
This technology addresses the following issues:
- Enhancing data storage and processing capabilities
- Improving energy efficiency in electronic devices
- Increasing data transfer speeds
Benefits
The benefits of this technology include:
- Higher data storage density
- Faster data access and processing
- Reduced power consumption in electronic devices
Potential Commercial Applications
The semiconductor device described in this patent application could have commercial applications in:
- Consumer electronics
- Data storage devices
- Internet of Things (IoT) devices
Possible Prior Art
One possible prior art for this technology could be the development of magnetic tunnel junction structures for memory devices in the semiconductor industry.
Unanswered Questions
How does this technology compare to existing magnetic memory devices on the market?
The article does not provide a direct comparison between this technology and existing magnetic memory devices in terms of performance, cost, or other factors.
What are the specific manufacturing processes involved in creating this semiconductor device?
The article does not delve into the detailed manufacturing processes or techniques used to fabricate the semiconductor device described.
Original Abstract Submitted
A semiconductor device includes a first substrate, a transistor, an interconnection structure, a first bonding pad, a magnetic tunnel junction (MTJ) structure, a conductive line and a second substrate. The transistor is formed on the first substrate. The interconnection structure is formed on the first substrate and electrically connected to the transistor. The first bonding pad is formed on and electrically connected to the interconnection structure. The MTJ structure is disposed on and electrically connected to the first bonding pad, wherein the MTJ structure comprises a free layer, a tunnel barrier layer, a synthetic antiferromagnet layer sequentially stacked up over the first bonding pad. The conductive line is disposed on the MTJ structure. The second substrate is disposed on the conductive line.
