18152157. SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Wu-Wei Tsai of Taoyuan City (TW)
Yan-Yi Chen of Taipei City (TW)
Hai-Ching Chen of Hsinchu City (TW)
Yu-Ming Lin of Hsinchu City (TW)
Chung-Te Lin of Tainan City (TW)
SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18152157 titled 'SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF
Simplified Explanation
The semiconductor device described in the abstract includes a gate, a semiconductor structure, a gate insulating layer, a first source/drain feature, and a second source/drain feature. The gate insulating layer separates the gate from the semiconductor structure, which consists of metal oxide layers and oxide layers. The source/drain features are connected to the semiconductor structure.
- The semiconductor device comprises a gate, semiconductor structure, gate insulating layer, and source/drain features.
- The semiconductor structure includes metal oxide layers and oxide layers.
- The source/drain features are electrically connected to the semiconductor structure.
Potential Applications
This technology could be applied in:
- Semiconductor manufacturing
- Electronics industry
- Integrated circuits
Problems Solved
This technology helps in:
- Enhancing semiconductor device performance
- Improving electrical connections
- Increasing device efficiency
Benefits
The benefits of this technology include:
- Higher device reliability
- Improved conductivity
- Enhanced overall device functionality
Potential Commercial Applications
The potential commercial applications of this technology are:
- Advanced semiconductor devices for consumer electronics
- High-performance computing systems
- Next-generation mobile devices
Possible Prior Art
One possible prior art for this technology could be:
- Previous semiconductor device structures with similar features and configurations
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance?
This article does not provide a direct comparison with existing semiconductor devices to evaluate performance differences.
What are the specific manufacturing processes involved in creating this semiconductor device?
The article does not delve into the detailed manufacturing processes used to fabricate this semiconductor device.
Original Abstract Submitted
A semiconductor device includes a gate, a semiconductor structure, a gate insulating layer, a first source/drain feature and a second source/drain feature. The gate insulating layer is located between the gate and the semiconductor structure. The semiconductor structure includes at least one first metal oxide layer, a first oxide layer, and at least one second metal oxide layer. The first oxide layer is located between the first metal oxide layer and the second metal oxide layer. The first source/drain feature and the second source/drain feature are electrically connected with the semiconductor structure.
