18151828. Germanium-Based Sensor with Junction-Gate Field Effect Transistor and Method of Fabricating Thereof simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
- 1 Germanium-Based Sensor with Junction-Gate Field Effect Transistor and Method of Fabricating Thereof
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Germanium-Based Sensor with Junction-Gate Field Effect Transistor and Method of Fabricating Thereof - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Original Abstract Submitted
Germanium-Based Sensor with Junction-Gate Field Effect Transistor and Method of Fabricating Thereof
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Jhy-Jyi Sze of Hsin-Chu City (TW)
Yi-Shin Chu of Hsinchu City (TW)
Yin-Kai Liao of Taipei City (TW)
Hsiang-Lin Chen of Hsinchu (TW)
Kuan-Chieh Huang of Hsinchu City (TW)
Germanium-Based Sensor with Junction-Gate Field Effect Transistor and Method of Fabricating Thereof - A simplified explanation of the abstract
This abstract first appeared for US patent application 18151828 titled 'Germanium-Based Sensor with Junction-Gate Field Effect Transistor and Method of Fabricating Thereof
Simplified Explanation
The patent application describes germanium-based sensors that consist of a germanium photodiode and a junction field effect transistor (JFET) made from a germanium layer on a silicon substrate. A doped silicon layer is placed between the germanium layer and the silicon substrate. The JFET has a doped polysilicon gate, and in some cases, a gate diffusion region is located in the germanium layer beneath the doped polysilicon gate. Additionally, a pinned photodiode passivation layer is present in the germanium layer, and a pair of doped regions in the germanium layer can act as an e-lens of the sensor.
- Germanium-based sensors with a germanium photodiode and a JFET made from a germanium layer on a silicon substrate
- A doped silicon layer is placed between the germanium layer and the silicon substrate
- The JFET has a doped polysilicon gate, and in some cases, a gate diffusion region is located in the germanium layer beneath the gate
- A pinned photodiode passivation layer is present in the germanium layer
- A pair of doped regions in the germanium layer can act as an e-lens of the sensor
Potential Applications
- Imaging devices
- Optical sensors
- Medical imaging equipment
- Security systems
Problems Solved
- Improved performance and sensitivity of germanium-based sensors
- Integration of germanium and silicon materials in a sensor design
Benefits
- Higher efficiency and accuracy in capturing and detecting light
- Enhanced functionality and versatility in sensor applications
- Improved signal-to-noise ratio for better image quality
Original Abstract Submitted
Germanium-based sensors are disclosed herein. An exemplary germanium-based sensor includes a germanium photodiode and a junction field effect transistor (JFET) formed from a germanium layer disposed on and/or in a silicon substrate. A doped silicon layer, which can be formed by in-situ doping epitaxially grown silicon, is disposed between the germanium layer and the silicon substrate. In embodiments where the germanium layer is on the silicon substrate, the doped silicon layer is disposed between the germanium layer and an oxide layer. The JFET has a doped polysilicon gate, and in some embodiments, a gate diffusion region is disposed in the germanium layer under the doped polysilicon gate. In some embodiments, a pinned photodiode passivation layer is disposed in the germanium layer. In some embodiments, a pair of doped regions in the germanium layer is configured as an e-lens of the germanium-based sensor.
