18151682. THREE-DIMENSIONAL STACKABLE FERROELECTRIC RANDOM ACCESS MEMORY DEVICES AND METHODS OF FORMING simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

THREE-DIMENSIONAL STACKABLE FERROELECTRIC RANDOM ACCESS MEMORY DEVICES AND METHODS OF FORMING

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Meng-Han Lin of Hsinchu (TW)

Bo-Feng Young of Taipei (TW)

Han-Jong Chia of Hsinchu (TW)

Sheng-Chen Wang of Hsinchu (TW)

Feng-Cheng Yang of Zhudong Township (TW)

Sai-Hooi Yeong of Zhubei City (TW)

Yu-Ming Lin of Hsinchu (TW)

THREE-DIMENSIONAL STACKABLE FERROELECTRIC RANDOM ACCESS MEMORY DEVICES AND METHODS OF FORMING - A simplified explanation of the abstract

This abstract first appeared for US patent application 18151682 titled 'THREE-DIMENSIONAL STACKABLE FERROELECTRIC RANDOM ACCESS MEMORY DEVICES AND METHODS OF FORMING

Simplified Explanation

The abstract describes a method for forming a ferroelectric random access memory (FeRAM) device. Here are the key points:

• The method involves forming two layer stacks, each consisting of a layer of electrically conductive material over a layer of dielectric material, on a substrate.
• The first layer stack extends beyond the lateral extents of the second layer stack.
• A trench is then formed through both layer stacks.
• The sidewalls and bottom of the trench are lined with a ferroelectric material.
• A channel material is conformally formed in the trench over the ferroelectric material.
• The trench is filled with a second dielectric material.
• Openings are formed in the second dielectric material and filled with a second electrically conductive material.

Potential applications of this technology:

• Ferroelectric random access memory (FeRAM) devices can be used in various electronic devices, such as computers, smartphones, and IoT devices.
• FeRAM offers non-volatile memory storage, which means data is retained even when power is lost, making it suitable for applications requiring fast and reliable data storage.

Problems solved by this technology:

• The method provides a way to form a FeRAM device with improved performance and reliability.
• By using a layered structure and filling the trench with a ferroelectric material, the device can store and retrieve data more efficiently.

Benefits of this technology:

• The method allows for the fabrication of FeRAM devices with a simplified and efficient manufacturing process.
• The resulting FeRAM devices have improved performance, reliability, and data storage capabilities.
• FeRAM technology offers advantages such as low power consumption, high-speed read and write operations, and resistance to radiation and extreme temperatures.

Original Abstract Submitted

A method of forming a ferroelectric random access memory (FeRAM) device includes: forming a first layer stack and a second layer stack successively over a substrate, where the first layer stack and the second layer stack have a same layered structure that includes a layer of a first electrically conductive material over a layer of a first dielectric material, where the first layer stack extends beyond lateral extents of the second layer stack; forming a trench that extends through the first layer stack and the second layer stack; lining sidewalls and a bottom of the trench with a ferroelectric material; conformally forming a channel material in the trench over the ferroelectric material; filling the trench with a second dielectric material; forming a first opening and a second opening in the second dielectric material; and filling the first opening and the second opening with a second electrically conductive material.