18150245. SEMICONDUCTOR STRUCTURE simplified abstract (Changxin Memory Technologies, Inc.)

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SEMICONDUCTOR STRUCTURE

Organization Name

Changxin Memory Technologies, Inc.

Inventor(s)

Jianfeng Xiao of Hefei City (CN)

Xiaojie Li of Hefei City (CN)

SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18150245 titled 'SEMICONDUCTOR STRUCTURE

Simplified Explanation

The present disclosure describes a semiconductor structure that includes word lines, semiconductor channels, stepped structures, and contact structures.

  • The semiconductor structure consists of word lines that extend in one direction and are spaced apart in another direction.
  • Semiconductor channels are also present, extending in a different direction and spaced apart in the same direction as the word lines.
  • The word lines surround the semiconductor channels.
  • A stepped structure is included, consisting of multiple steps that are in contact with and connected to the word lines.
  • The top surface of each step has a different height along the direction of the word lines.
  • The steps are arranged in an array along both the direction of the word lines and the direction of the semiconductor channels.
  • Contact structures are provided, which are in contact with and connected to the steps.

Potential applications of this technology:

  • This semiconductor structure can be used in various electronic devices, such as integrated circuits and memory devices.
  • It can improve the performance and efficiency of these devices by providing a more compact and organized structure.

Problems solved by this technology:

  • The stepped structure helps to optimize the layout and arrangement of the word lines and semiconductor channels.
  • It allows for better control of the electrical properties and performance of the semiconductor structure.

Benefits of this technology:

  • The semiconductor structure provides improved functionality and performance in electronic devices.
  • It allows for a more efficient use of space and resources.
  • The stepped structure enhances the electrical properties and reliability of the semiconductor structure.


Original Abstract Submitted

The present disclosure provides a semiconductor structure. The semiconductor structure includes: a plurality of word lines extending along a first direction and arranged at intervals along a third direction; a plurality of semiconductor channels extending along a second direction and arranged at intervals along the third direction, wherein the word line surrounds the semiconductor channel along the third direction; a stepped structure including a plurality of steps, wherein the step is in contact with and connected to the word line, a height of a top surface of any one of the steps is different from a height of a top surface of another one of the steps along the third direction, the steps are arranged in an array along the first direction and the second direction; and a plurality of contact structures, wherein the contact structure is in contact with and connected to the step.

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