18149099. DIELECTRIC FILMS OVER ELECTRODE FOR HIGH VOLTAGE PERFORMANCE simplified abstract (TEXAS INSTRUMENTS INCORPORATED)

DIELECTRIC FILMS OVER ELECTRODE FOR HIGH VOLTAGE PERFORMANCE

Organization Name

TEXAS INSTRUMENTS INCORPORATED

Inventor(s)

Jeffrey Alan West of Dallas TX (US)

Yoshihiro Takei of USHIKU (JP)

Mitsuhiro Sugimoto of TSUKUBA (JP)

DIELECTRIC FILMS OVER ELECTRODE FOR HIGH VOLTAGE PERFORMANCE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18149099 titled 'DIELECTRIC FILMS OVER ELECTRODE FOR HIGH VOLTAGE PERFORMANCE

Simplified Explanation

The microelectronic device described in the abstract includes a lower isolation element, an upper isolation element, and a lower field reduction layer with specific dielectric properties. Here are some key points to explain the innovation:

• Lower isolation element and upper isolation element separated by an isolation dielectric layer stack
• Lower field reduction layer over the lower isolation element, under the isolation dielectric layer stack
• Lower field reduction layer includes a first dielectric layer with a higher dielectric constant than a second dielectric layer
• Second dielectric layer has a higher dielectric constant than the isolation dielectric layer stack
• Methods of forming microelectronic devices with lower field reduction layers are disclosed

Potential Applications

The technology described in this patent application could be applied in the following areas:

• Semiconductor manufacturing
• Integrated circuits
• Electronic devices requiring improved isolation and reduced field effects

Problems Solved

This technology addresses the following issues:

• Field effects in microelectronic devices
• Isolation between different components
• Signal interference in integrated circuits

Benefits

The benefits of this technology include:

• Improved performance of microelectronic devices
• Enhanced isolation capabilities
• Reduction of signal interference

Potential Commercial Applications

The potential commercial applications of this technology could include:

• Consumer electronics
• Telecommunications equipment
• Automotive electronics

Possible Prior Art

One possible prior art for this technology could be the use of field reduction layers in semiconductor devices to improve isolation and reduce interference. However, the specific dielectric properties described in this patent application may be unique.

How does this technology compare to existing field reduction techniques in microelectronic devices?

This article does not provide a direct comparison to existing field reduction techniques in microelectronic devices. It would be helpful to know how this innovation improves upon or differs from current methods.

What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing?

The article does not address the potential challenges in implementing this technology on a large scale in semiconductor manufacturing. Understanding the obstacles and limitations could provide valuable insights into the practicality of this innovation.

Original Abstract Submitted

A microelectronic device includes a lower isolation element and an upper isolation element, separated by an isolation dielectric layer stack. The microelectronic device includes a lower field reduction layer over the lower isolation element, under the isolation dielectric layer stack. The lower field reduction layer includes a first dielectric layer adjacent to the isolation dielectric layer stack, and a second dielectric layer over the first dielectric layer. A dielectric constant of the first dielectric layer is greater than a dielectric constant of the second dielectric layer. The dielectric constant of the second dielectric layer is greater than a dielectric constant of the isolation dielectric layer stack adjacent to the lower field reduction layer. Methods of forming example microelectronic device having lower field reduction layers are disclosed.