18142291. THREE-DIMENSIONAL NON-VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
THREE-DIMENSIONAL NON-VOLATILE MEMORY DEVICE
Organization Name
Inventor(s)
Hyunmook Choi of Suwon-si (KR)
THREE-DIMENSIONAL NON-VOLATILE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18142291 titled 'THREE-DIMENSIONAL NON-VOLATILE MEMORY DEVICE
Simplified Explanation
The abstract describes a three-dimensional non-volatile memory device that includes horizontal word lines separated from each other in a vertical direction. It also includes horizontal ferroelectric layers arranged among the horizontal word lines, vertical ferroelectric layers contacting side walls of the horizontal ferroelectric layers and extending in the vertical direction, a semiconductor pillar passing through the horizontal word lines in the vertical direction, and a channel region between the horizontal word lines and the semiconductor pillar. The upper and lower horizontal ferroelectric layers are separated from each other by an air gap in the vertical direction.
- The device is a three-dimensional non-volatile memory device.
- It includes horizontal word lines separated vertically.
- Horizontal ferroelectric layers are arranged among the horizontal word lines.
- Vertical ferroelectric layers contact the side walls of the horizontal ferroelectric layers and extend vertically.
- A semiconductor pillar passes through the horizontal word lines vertically.
- There is a channel region between the horizontal word lines and the semiconductor pillar.
- The upper and lower horizontal ferroelectric layers are separated by an air gap vertically.
Potential Applications:
- Memory devices in electronic devices such as smartphones, tablets, and computers.
- Storage devices in data centers and servers.
- Embedded memory in IoT devices and wearable technology.
Problems Solved:
- Increase in memory density by utilizing three-dimensional architecture.
- Non-volatile memory allows data retention even when power is turned off.
- Improved performance and reliability of memory devices.
Benefits:
- Higher memory density, allowing for more data storage in a smaller footprint.
- Non-volatile memory ensures data retention and reduces the risk of data loss.
- Improved performance and reliability of memory devices.
- Enables the development of smaller and more efficient electronic devices.
Original Abstract Submitted
A three-dimensional non-volatile memory device includes horizontal word lines separated from each other in a vertical direction, horizontal ferroelectric layers arranged among the horizontal word lines, the horizontal ferroelectric layers including upper horizontal ferroelectric layers and lower horizontal ferroelectric layers, vertical ferroelectric layers contacting side walls of the horizontal ferroelectric layers and extending in the vertical direction, a semiconductor pillar passing through the horizontal word lines in the vertical direction, and a channel region between the horizontal word lines and the semiconductor pillar, wherein the upper horizontal ferroelectric layers and the lower horizontal ferroelectric layers are separated from each other by an air gap in the vertical direction.
