18138495. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18138495 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
A semiconductor memory device is described in the abstract, which includes a substrate with active regions in a memory cell region and logic active regions in a peripheral circuit region. It also includes a word line, a bit line structure, and a gate line.
- The semiconductor memory device includes a substrate with active regions in a memory cell region and logic active regions in a peripheral circuit region.
- It has a word line extending in a first horizontal direction on the active regions.
- The device includes a bit line structure extending in a second horizontal direction orthogonal to the first direction, with a bit line, cover insulating structure, and insulating capping structure.
- It also has a gate line on the logic active region.
Potential Applications
The technology described in this patent application could be applied in various semiconductor memory devices, such as DRAM, SRAM, and flash memory.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor memory devices by optimizing the layout and structure of active regions, word lines, bit lines, and gate lines.
Benefits
The benefits of this technology include increased memory device performance, enhanced data storage capacity, and improved reliability and durability.
Potential Commercial Applications
The technology could be utilized in the manufacturing of advanced semiconductor memory devices for consumer electronics, data storage systems, and computing devices.
Possible Prior Art
One possible prior art for this technology could be the development of similar semiconductor memory devices with optimized layout and structure for improved performance and efficiency.
Unanswered Questions
How does this technology compare to existing memory device designs in terms of speed and power consumption?
The article does not provide a direct comparison between this technology and existing memory device designs in terms of speed and power consumption.
What are the specific manufacturing processes required to implement this technology in semiconductor memory devices?
The article does not detail the specific manufacturing processes needed to implement this technology in semiconductor memory devices.
Original Abstract Submitted
A semiconductor memory device is provided. The semiconductor memory device includes: a substrate including a plurality of active regions in a memory cell region and at least one logic active region in a peripheral circuit region; a word line extending in a first horizontal direction on the plurality of active regions; a bit line structure extending in a second horizontal direction orthogonal to the first horizontal direction, on the plurality of active regions, and including a bit line, a cover insulating structure on a side surface of an end of the bit line, and an insulating capping structure on the bit line and the cover insulating structure; and a gate line on the at least one logic active region
