18135559. LASER CRYSTALLIZATION APPARATUS AND LASER CRYSTALLIZATION METHOD USING THE SAME simplified abstract (Samsung Display Co., Ltd.)
Contents
- 1 LASER CRYSTALLIZATION APPARATUS AND LASER CRYSTALLIZATION METHOD USING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 LASER CRYSTALLIZATION APPARATUS AND LASER CRYSTALLIZATION METHOD USING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
LASER CRYSTALLIZATION APPARATUS AND LASER CRYSTALLIZATION METHOD USING THE SAME
Organization Name
Inventor(s)
DONG-MIN Lee of Yongin-si (KR)
LASER CRYSTALLIZATION APPARATUS AND LASER CRYSTALLIZATION METHOD USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18135559 titled 'LASER CRYSTALLIZATION APPARATUS AND LASER CRYSTALLIZATION METHOD USING THE SAME
Simplified Explanation
The laser crystallization apparatus described in the patent application includes a beam generator, a beam converter, and a beam concentrator to improve the crystallization process of silicon films.
- The beam converter divides the input laser beam into multiple sub beams at a predetermined rotation angle, increasing the stiffness area and decreasing the high-intensity area of the beam profile.
- The beam concentrator condenses the sub beams into an output laser beam with a predetermined beam width, allowing for a gradual dehydrogenation effect on an amorphous silicon film and minimizing defects in the resulting polycrystalline silicon film.
Potential Applications
The technology can be applied in the manufacturing of electronic devices such as solar panels, displays, and integrated circuits where high-quality polycrystalline silicon films are required.
Problems Solved
This technology addresses the issue of defects in polycrystalline silicon films formed by laser crystallization, improving the overall quality and reliability of electronic devices utilizing such films.
Benefits
The apparatus allows for a more controlled and efficient crystallization process, leading to higher quality polycrystalline silicon films with reduced defects and improved performance in electronic devices.
Potential Commercial Applications
The technology can be utilized in the semiconductor industry for the production of advanced electronic devices, offering manufacturers a more reliable and cost-effective method for producing high-quality polycrystalline silicon films.
Possible Prior Art
Prior art in the field of laser crystallization may include similar apparatuses or methods for improving the crystallization process of silicon films, but the specific design and functionality of this apparatus may be unique to this patent application.
Unanswered Questions
How does this technology compare to other methods of laser crystallization in terms of efficiency and cost-effectiveness?
The article does not provide a direct comparison between this technology and other methods of laser crystallization, leaving room for further research and analysis to determine its advantages over existing techniques.
What are the potential limitations or challenges in implementing this technology on an industrial scale?
The article does not address the scalability or practicality of deploying this apparatus in large-scale manufacturing processes, raising questions about its feasibility and potential obstacles in industrial applications.
Original Abstract Submitted
Provided is a laser crystallization apparatus including a beam generator generating an input laser beam, a beam converter dividing an input laser beam incident from a beam generator into a plurality of sub laser beams and disposed to have a predetermined rotation angle with respect to an optical axis parallel to a traveling direction of an input laser beam, and a beam concentrator condensing a plurality of sub laser beams and outputting an output laser beam having a beam profile having a predetermined beam width. Accordingly, a width of a stiffness area of a beam profile of an input laser beam may increase and a width of a high intensity area may decrease. Accordingly, the number of shots for the stiffness area at specific point of an amorphous silicon film may increase. Accordingly, a gradual dehydrogenation effect on an amorphous silicon film may be implemented. Accordingly, occurrence of defects in a polycrystalline silicon film formed by laser crystallization may be minimized or prevented.
